UNR221T00L Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	22 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	150MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	Mini3-G1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The UNR221T00L bipolar junction transistor (BJT) is a single, pre-biased, semiconductor device commonly used in many electronic applications. It is an invaluable component in the products of numerous industries. The UNR221T00L can serve a range of functions, from amplifying an input signal, switching a load on and off, or varying the electrical levels in a circuit. Its wide base of users has made it one of the most widely used transistors in the world.The UNR221T00L is constructed from three main elements. The base is a single layer of silicon, which provides electrical contact with the collector. The collector and the emitter are made of heavily doped semiconductor material, which provides the ability to conduct electricity. The third element is the schematic symbol, which is used to indicate the type of transistor used.The UNR221T00L has an operating voltage range of 2 V to 6 V, which means it is suitable for a wide range of applications, such as power applications, logic circuits, and switching. The use of low power transistors allows for the efficient operation of small circuits. The UNR221T00L is more efficient than other types of transistors because of its small size, which reduces its power loss. The output current of the UNR221T00L can be as high as 200mA.The working principle of the UNR221T00L is based on the principle of minority carrier injection. When a small current is applied to the base of the transistor, it injects minority carriers into the base, which creates a majority carrier collector current. This majority carrier collector current then drives the output voltage of the transistor, providing the necessary current needed to drive a load. The gain of the transistor is determined by the amount of current injected into the base, which is expressed as the current gain of the transistor, expressed as hFE. The higher the hFE, the higher the gain of the transistor.There are several advantages of using the UNR221T00L transistor. One of the primary advantages is its cost efficiency. Because it is designed in a small package, it offers greater cost savings than larger transistors. Additionally, the UNR221T00L is a single device, which reduces the complexity of a typical circuit. Furthermore, its current gains are higher than that of other similar transistors, which can increase the efficiency of the design.The UNR221T00L bipolar junction transistor is an invaluable component in many electronic applications. It is preferred for its cost efficiency, small size, and versatility, which makes it suitable for a wide range of applications. Its working principle is based on the principle of minority carrier injection, which allows for efficient and reliable operation. The UNR221T00L is a primary component in the products of numerous industries. With its many functional and cost benefits, it is safe to say that the UNR221T00L transistor is here to stay.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description