UNR511D00L Discrete Semiconductor Products

Resistor - Emitter Base (R2):	10 kOhms
Supplier Device Package:	SMini3-G1
Package / Case:	SC-70, SOT-323
Mounting Type:	Surface Mount
Power - Max:	150mW
Frequency - Transition:	80MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 5mA, 10V
Series:	--
Resistor - Base (R1):	47 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction

UNR511D00L is a single pre-biased bipolar junction transistor (BJT) device, which is specially designed for applications in audio amplifier, modulator, and switch applications. The device is manufactured in a TO-220 package and is available in both through-hole and surface-mount packages. UNR511D00L provides the customer with a cost-effective solution for applications requiring a wide range of input voltage and output power.

Device Construction

UNR511D01L has two separable and distinct p-type and n-type regions. In this device, one of the three regions is pre-biased. This is done to ensure that the device starts operating as soon as the required power source is applied. To optimize the power performance, the device also includes a well-designed silica insulation layer, which prevents current leakage. The device also includes certified electrostatic discharge (ESD) protection.

Working Principle

A bipolar junction transistor (BJT) consists of three layers of semiconductor material, which serve as its base, emitter and collector. The BJT works on the principle of controlling the current flow between the collector and emitter by the biasing voltage applied at the base terminal. At its normal state, the device allows very small current to pass through its emitter-collector junction and only when a larger biasing voltage is applied, a larger current flows. The UNR511D00L operates on the same principle; however, in this case, the current flow is optimized by pre-biasing one of the three regions of the device. This pre-biasing helps the device turn on faster and achieve lower on-state resistance. This simplified on state resistance makes the device ideal for audio applications since this reduction in on state resistance leads to a dramatic increase in the devices’ efficiency.

Applications

The UNR511D00L is mainly used for audio applications such as amplifiers, modulators and switches applications. The device\'s pre-biasing feature and low on state resistance make it perfect for audio switching requirements, as it can switch between on and off states faster, thereby reducing the response time of the circuit. This allows for a fast, accurate and efficient performance. The device is also ideal for applications such as audio amplifiers and modulators, as its low on-state resistance and fast switching times allow for an accurate and efficient amplification of the signal.

Conclusion

UNR511D00L is a single pre-biased bipolar junction transistors (BJT), which is designed especially for applications in audio amplifier, modulator, and switch applications. The device provides customers with a cost-effective solution for applications requiring a wide range of input voltage and output power. Its pre-biasing feature gives it an edge in audio applications, as it ensures that the device starts operating as soon as the required power source is applied. This makes the device perfect for audio switching requirements, as it can switch between on and off states faster, resulting in a quicker response time. The device is also ideal for audio amplifiers and modulators, due to its low on-state resistance and fast switching times, allowing for a more accurate and efficient signal amplification.

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