UNR511LG0L Allicdata Electronics

UNR511LG0L Discrete Semiconductor Products

Allicdata Part #:

UNR511LG0LTR-ND

Manufacturer Part#:

UNR511LG0L

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 150MW SMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR511LG0L datasheetUNR511LG0L Datasheet/PDF
Quantity: 6000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.04680
6000 +: $ 0.04212
Stock 6000Can Ship Immediately
$ 0.05
Specifications
Resistor - Emitter Base (R2): 4.7 kOhms
Supplier Device Package: SMini3-F2
Package / Case: SC-85
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 80MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Series: --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The UNR511LG0L is a single pre-biased, bipolar junction transistor (BJT). It is designed for low power applications that require ultra-low leakage current and very fast switching speeds. The UNR511LG0L has a base current of only 50 nA, while delivering a collector current of up to 1 A. It also has a fast turn-on time of under 1 nanosecond and a low forward voltage of 0.35 V. In addition, the UNR511LG0L offers excellent thermal stability, making it ideal for applications in high-temperature environments.

The UNR511LG0L is typically used in audio amplifiers and PWM controllers, among other power management applications. In PWM controllers, for example, it can be used in the output stage to drive the load with high efficiency. In AC/DC converters, it can be used to control the switching of the converter by providing a low voltage, fast-response signal. The UNR511LG0L\'s low power consumption and fast switching speed also make it an ideal choice for applications such as on/off switches.

The UNR511LG0L works by using a bipolar transistor structure, which is made up of three layers — a collector, an emitter and a base. The base is where the current flow is controlled. When a voltage is applied to the base, it creates a field which attracts electrons to the base and causes a current to flow through the transistor. The current flow is then amplified and sent to the collector, which in turn controls the output current. The UNR511LG0L is pre-biased, meaning that a voltage is already applied to the base before any current is sent to it. This allows the transistor to switch very quickly and with minimal power consumption.

The UNR511LG0L is an ideal choice for low power, high efficiency applications. With its ultra-low leakage current, low voltage, and fast switching speed, it is perfect for any application requiring fast and efficient power management. Its pre-biased design allows for quick activation and also helps to reduce power consumption, making it an excellent choice for audio amplifiers, PWM controllers and other power management applications.

The specific data is subject to PDF, and the above content is for reference

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