UNR52A4G0L Discrete Semiconductor Products

Resistor - Emitter Base (R2):	47 kOhms
Supplier Device Package:	SMini3-F2
Package / Case:	SC-85
Mounting Type:	Surface Mount
Power - Max:	150mW
Frequency - Transition:	150MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Series:	--
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	80mA
Transistor Type:	NPN - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction

The UNR52A4G0L is a single, pre-biased bipolar junction transistor (BJT). A bipolar junction transistor is a three-terminal electronic device commonly used as a switch or amplifier in electronic circuits. It is composed of two PN junction diodes connected together. UNR52A4G0L has a relatively low operating temperature, making it ideal for applications in extreme temperatures. It also has a high voltage gain and low power consumption, making it perfect for battery-operated, energy-saving devices.

Application field

UNR52A4G0L is a versatile BJT device that can be used in a variety of applications. It is suitable for signal-transmission applications such as wireless communications, radio-frequency circuits, and telecommunications. It is a great option for current-limiting systems, audio power amplifiers, voltage regulators, and audio compressor/limiter circuits. It is also used in circuits for computers, peripherals, and consumer electronics such as MP3 players.

Working Principle

The UNR52A4G0L works on the principle of base-emitter voltage. It is composed of three terminals—the base, collector, and emitter—which act as a current-controlling switch. The base terminal is used to control the current flow between the collector and emitter. When there is a voltage difference between the base and emitter, a current is allowed to flow between the collector and emitter. This current can be controlled by adjusting the voltage at the base terminal. The UNR52A4G0L is pre-biased, meaning that the collector and emitter have a predetermined voltage difference. This enables the device to switch currents on and off quickly, providing fast operation even at low voltage. The UNR52A4G0L also has a high voltage gain, meaning that it can amplify small signals. This makes it ideal for applications that require a wide dynamic range.

Conclusion

The UNR52A4G0L is a versatile single, pre-biased bipolar junction transistor (BJT), ideal for applications in extreme temperatures and high-voltage, low-power consumption systems. It is suitable for signal-transmission applications such as wireless communications, radio-frequency circuits, and telecommunications. It is also used in circuits for computers, peripherals, and consumer electronics such as MP3 players. The UNR52A4G0L works on the principle of base-emitter voltage. It is pre-biased, meaning that the collector and emitter have a predetermined voltage difference. This enables the device to switch currents on and off quickly, providing fast operation even at low voltage. The UNR52A4G0L also has a high voltage gain, making it perfect for amplifying small signals.

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