UNR51ANG0L Allicdata Electronics

UNR51ANG0L Discrete Semiconductor Products

Allicdata Part #:

UNR51ANG0LTR-ND

Manufacturer Part#:

UNR51ANG0L

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 150MW SMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR51ANG0L datasheetUNR51ANG0L Datasheet/PDF
Quantity: 3000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.04680
Stock 3000Can Ship Immediately
$ 0.05
Specifications
Resistor - Emitter Base (R2): 47 kOhms
Supplier Device Package: SMini3-F2
Package / Case: SC-85
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 80MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Series: --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 80mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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An unr51ang0l is a type of single pre-biased bipolar transistor (BJT). This type of transistor is used in many applications since it is highly versatile and efficient. It is typically used in low-power, low-voltage applications, making it ideal for a variety of consumer electronics devices.

The most important characteristic of an unr51ang0l is its ability to efficiently switch device operation between two specific operating states. These two states are called saturated and cut-off. A saturated state is when the transistor is securely conducting a current between its collector and emitter terminals, and a cut-off state is when the transistor is completely shut off and not conducting any current. This type of transistor also has the unique ability to switch between the two states in a very short amount of time, allowing it to be used in many high-speed applications.

The main components of an unr51ang0l are its collector-base junction, collector-emitter junction, and base-emitter junction. These three junctions are used to help control the current flow through the transistor. The unr51ang0l is used as a an amplification device, and when a current is applied to the base of the device, it changes the resistance of the base-emitter junction, resulting in a much greater voltage or current at the output.

A pre-biased transistor is one that has an additional connection between the collector and the base. This connection allows the transistor to remain biased in either the cut-off or saturated state with little effort. This makes the unr51ang0l highly efficient and easier to use for a variety of applications.

Unr51ang0ls are used in many applications, such as switching, amplification, rectification, or signal processing. Because of its pre-biasing capabilities, this type of transistor can be used in applications that require high-speed switching or level conversion, as well as for signal conditioning and signal amplification. It is also often used for power management and signal conditioning.

Unr51ang0ls are a very important type of transistor, and play an important role in a variety of applications. This type of transistor is highly versatile, has high switching capabilities, and can be used to increase efficiency in many applications. With their pre-biasing capabilities, they are often the perfect choice for applications that require high-speed switching, level conversion, signal conditioning, or signal amplification.

The specific data is subject to PDF, and the above content is for reference

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