UNR52A8G0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR52A8G0LTR-ND |
Manufacturer Part#: |
UNR52A8G0L |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR52A8G0L Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04680 |
Resistor - Emitter Base (R2): | 5.1 kOhms |
Supplier Device Package: | SMini3-F2 |
Package / Case: | SC-85 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 150MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 510 Ohms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 80mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
UNR52A8G0L transistors are a type of bipolar junction transistor (BJT) used as a single, pre-biased component. They are typically used for high speed applications, and can operate at frequencies up to several hundred MHz. They offer excellent gain and low noise compared to other BJT varieties, and can be used in both discrete and integrated circuit (IC) applications.
A BJT is a multi-layer semiconductor device with three electrodes, or terminals, and two junctions; the emitter-base junction and the collector-base junction. In order to work, the transistor must be biased, or supplied with an external DC current. In the case of UNR52A8G0L transistors, they are pre-biased and require no additional external componentry to maintain the bias.
The operation of a pre-biased UNR52A8G0L is quite simple. As current, or voltage, is applied to the base of the transistor, the the transistor allows electrons to flow from the emitter to the collector. This creates a current amplification, with the amount of amplification determined by the gain of the transistor. The gain can be changed by adjusting the bias, but the UNR52A8G0L is pre-biased, so this can not be done.
The UNR52A8G0L is particularly useful for high speed applications, as it is able to maintain its gain over a wide range of frequencies and voltages. This allows it to be used for a variety of functions, such as amplifying audio signals, power amplifier applications, and digital logic circuits. It can also be used in RF circuits, where its high frequency performance is extremely useful.
In addition to its high speed performance, the UNR52A8G0L offers some distinct advantages over other types of BJT transistors. For example, the UNR52A8G0L is extremely cost-effective and reliable, making it an ideal choice for mass production of integrated circuits. Furthermore, due to its pre-biased operation, no additional external components are necessary, saving both time and money during the manufacturing process.
The UNR52A8G0L pre-biased transistor is a versatile device, offering excellent performance and cost savings. It is ideal for high speed applications, and can be used in both discrete and integrated circuit applications. With its simple operation and low cost, it is easy to see why this transistor has become so popular in recent years.
The specific data is subject to PDF, and the above content is for reference
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