UNR52A8G0L Allicdata Electronics

UNR52A8G0L Discrete Semiconductor Products

Allicdata Part #:

UNR52A8G0LTR-ND

Manufacturer Part#:

UNR52A8G0L

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 150MW SMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR52A8G0L datasheetUNR52A8G0L Datasheet/PDF
Quantity: 3000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.04680
Stock 3000Can Ship Immediately
$ 0.05
Specifications
Resistor - Emitter Base (R2): 5.1 kOhms
Supplier Device Package: SMini3-F2
Package / Case: SC-85
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 150MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Series: --
Resistor - Base (R1): 510 Ohms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 80mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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UNR52A8G0L transistors are a type of bipolar junction transistor (BJT) used as a single, pre-biased component. They are typically used for high speed applications, and can operate at frequencies up to several hundred MHz. They offer excellent gain and low noise compared to other BJT varieties, and can be used in both discrete and integrated circuit (IC) applications.

A BJT is a multi-layer semiconductor device with three electrodes, or terminals, and two junctions; the emitter-base junction and the collector-base junction. In order to work, the transistor must be biased, or supplied with an external DC current. In the case of UNR52A8G0L transistors, they are pre-biased and require no additional external componentry to maintain the bias.

The operation of a pre-biased UNR52A8G0L is quite simple. As current, or voltage, is applied to the base of the transistor, the the transistor allows electrons to flow from the emitter to the collector. This creates a current amplification, with the amount of amplification determined by the gain of the transistor. The gain can be changed by adjusting the bias, but the UNR52A8G0L is pre-biased, so this can not be done.

The UNR52A8G0L is particularly useful for high speed applications, as it is able to maintain its gain over a wide range of frequencies and voltages. This allows it to be used for a variety of functions, such as amplifying audio signals, power amplifier applications, and digital logic circuits. It can also be used in RF circuits, where its high frequency performance is extremely useful.

In addition to its high speed performance, the UNR52A8G0L offers some distinct advantages over other types of BJT transistors. For example, the UNR52A8G0L is extremely cost-effective and reliable, making it an ideal choice for mass production of integrated circuits. Furthermore, due to its pre-biased operation, no additional external components are necessary, saving both time and money during the manufacturing process.

The UNR52A8G0L pre-biased transistor is a versatile device, offering excellent performance and cost savings. It is ideal for high speed applications, and can be used in both discrete and integrated circuit applications. With its simple operation and low cost, it is easy to see why this transistor has become so popular in recent years.

The specific data is subject to PDF, and the above content is for reference

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