UNR511E00L Allicdata Electronics

UNR511E00L Discrete Semiconductor Products

Allicdata Part #:

UNR511E00LTR-ND

Manufacturer Part#:

UNR511E00L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 150MW SMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR511E00L datasheetUNR511E00L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SMini3-G1
Description

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The UNR511E00L is a single, pre-biased bipolar junction transistor (BJT). It is one of a series of transistors, each of which is designed for a specific application and use. The UNR511E00L is an NPN transistor, meaning it is composed of three layers of semiconductor material: N-doped silicon, P-doped silicon and a conducting base layer. This particular device has an emitter current rating of 5mA, a collector current rating of 25mA and a collector-emitter voltage rating of 30V, and is commonly used as a switch or amplifier.

The UNR511E00L has two primary application fields: switching and amplification. As a switch, the device can be used in a variety of circuit configurations. In its most basic form, it is used to turn a device on or off by controlling the current flow through it. It can also be used in digital logic circuits, as it can be easily switched to either a high or low logic state. As an amplifier, the UNR511E00L can be used to increase the amplitude of a given signal. This is achieved by increasing the current capacity of the device.

The UNR511E00L operates on the principle of electron-hole recombination and diffusion. When a voltage is applied to the base of the device, a current is allowed to pass from the emitter to the collector. This current is known as the collector current. As the current passes through the transistor, electrons from the N-doped silicon layer recombine with holes from the P-doped silicon layer and diffuse across the depletion zone. This process of current flow, recombination and diffusion is what enables the device to function as an amplifier or switch.

The UNR511E00L is an ideal choice for applications requiring a low-power switching and amplification device. Its simple operation, low power requirements and pre-biased design make it an ideal choice for applications such as ATM machines, telephone lines, door-opening systems and security alarms. Additionally, its capacity for digital logic and voltage amplification makes it a great choice for digital systems and other electronics applications.

The specific data is subject to PDF, and the above content is for reference

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