UNR515400L Discrete Semiconductor Products |
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Allicdata Part #: | UNR515400LTR-ND |
Manufacturer Part#: |
UNR515400L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR515400L Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Resistor - Emitter Base (R2): | 47 kOhms |
Supplier Device Package: | SMini3-G1 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 80MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 1.2V @ 330µA, 50mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR515400L is a single pre-biased transistor that belongs to the family of bipolar junction transistors. The transistor is designed for applications where high-speed switching, high input impedance, and low power consumption are paramount requirements. It is best suited for use in industrial automation, process control, and robotics.
A bipolar junction transistor (BJT) consists of three layers of semiconductor material. The layer between the two outer layers is known as the base. The two outer layers are called the emitter and collector. When a voltage is applied to the base, current flows from the collector to the emitter, producing an amplified signal.
In the UNR515400L, the base is pre-biased, meaning it has a built-in voltage. This voltage helps to ensure that the transistor operates correctly, even when a signal is not present. The pre-biased base helps reduce the amount of power needed to keep the transistor operating correctly, since it eliminates the need to constantly provide a signal to the transistor to keep it active.
The UNR515400L has a low saturation voltage, meaning it can switch quickly with minimal power consumption. This is ideal for applications that require fast switching, such as robotics or industrial automation, as well as applications that require accurate control and precision timing. The built-in voltage of the pre-biased base helps to ensure that the transistor responds quickly and accurately to signals applied to it.
The UNR515400L also has a high input impedance, meaning it does not need a large amount of current to switch from one state to another. This helps to reduce power consumption, as the transistor does not need to be supplied with large amounts of current to keep it active. Additionally, the high input impedance reduces heat buildup in the transistor, which can help to ensure that the transistor does not malfunction due to heat buildup.
Finally, the UNR515400L has a low capacitance, meaning it is less affected by high frequency signals. This is important in applications such as robotics and process control, as a large capacitance can cause the transistor to malfunction due to the amount of noise generated by high frequency signals.
The UNR515400L is an ideal choice for applications that require high-speed switching, high input impedance, and low power consumption. Its pre-biased base helps to reduce power consumption, while its low capacitance makes it less susceptible to noise. Its high input impedance helps to reduce heat buildup, while its low saturation voltage allows it to switch quickly with minimal power consumption.
The specific data is subject to PDF, and the above content is for reference
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