UNR511F00L Allicdata Electronics

UNR511F00L Discrete Semiconductor Products

Allicdata Part #:

UNR511F00LTR-ND

Manufacturer Part#:

UNR511F00L

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 150MW SMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR511F00L datasheetUNR511F00L Datasheet/PDF
Quantity: 9000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
3000 +: $ 0.04680
6000 +: $ 0.04212
Stock 9000Can Ship Immediately
$ 0.05
Specifications
Resistor - Emitter Base (R2): 10 kOhms
Supplier Device Package: SMini3-G1
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 80MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Series: --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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UNR511F00L transistors belong to the category of Single, Pre-Biased Bipolar Junction Transistors (BJT). These transistors are considered useful in a variety of electronic circuits. This article will provide an in-depth look at its working principle and application field.Bipolar transistors consist of three terminals: the emitter, the base, and the collector. Their operation is based on the principle that changing voltage applied across the base-emitter junction can be used to control the larger current flow in the emitter-collector junction. This is important since it enables one to amplify signals, since the current gain depends on the ratio of collector current to the base current. The UNR511F00L is a single pre-biased transistor. This means that it is already biased to a quiescent point. The bias consists of an initial current through the emitter of the transistor. This current simulates the flow of electrons and reduces the voltage drop that occurs between it and the collector. This ability to reduce the voltage drop ensures that the transistor is always in its most efficient working range.The UNR511F00L transistor is used in several different scenarios, but some of the more common applications include driving loads, operating in Class AB amplifiers, and powering wideband amplifiers. In driving loads, the UNR511F00L is an excellent choice due to its ability to provide very high power efficiency and its low power dissipation. By using the UNR511F00L, engineers can create circuits that can drive various types of loads as efficiently as possible without compromising on performance. When operating in Class AB amplifiers, the UNR511F00L provides the required amplification of signals and is capable of delivering audio signals with clarity and detail. It is ideal for use in audio and video systems, such as surround sound systems. Additionally, the UNR511F00L can be used to power wideband amplifiers. This transistor has very low noise, making it ideal for applications that require a high level of performance and accuracy. It can be used to power amplifiers that are capable of handling high-powered signals, such as high-end digital audio equipment. The UNR511F00L is one of the few transistors that offer the advantages of a pre-biased transistor. Its ability to reduce voltage drops and provide high power efficiency makes it a great choice for many types of electronic applications. Additionally, its high accuracy and low noise make it an excellent option for powering wideband amplifiers and Class AB amplifiers.

The specific data is subject to PDF, and the above content is for reference

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