UNR51A1G0L Discrete Semiconductor Products

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The UNR51A1G0L transistor is a single, pre-biased bipolar junction transistor (BJT) designed for use in a variety of electronic applications. This NPN transistor type provides high gain and low current consumption, making it ideal for portable, low-power devices. The efficient design also makes it suitable for long-term usage.

This transistor is an epitaxial type with an active base region, transversal short channel current and a high-length channel. Its structure provides improved collector to-emitter voltage and breakdown voltage. This design also offers improved current gain over conventionally formed arrow transistors.

In terms of its electrical parameters, the UNR51A1G0L is characterized by a maximum collector current of 800mA, a collector-emitter saturation voltage of 0.5V, a band gain of 300, an emitter to collector breakdown voltage of 125V, and an emitter to base breakdown voltage of 6V. Yet in spite of its high current handling, the device still maintains low power dissipation characteristics, consuming just 6mW at a current flow of 800mA.

The UNR51A1G0L is able to operate over a wide temperature range, from -40°C to 125°C, making it suitable for both passive and active environments. It is available with a range of lead forms, including through-hole, clip mount and surface mount.

In terms of its operational principle, the UNR51A1G0L utilizes the normal junction field-effect transistor (JFET) structure. A positive voltage is applied to the gate to induce a positive charge in the substrate. This charge then creates a lowering of the barrier potential of the JFET region, allowing an increased current flow. This increased current flow then determines the operating point of the device.

The UNR51A1G0L can be utilized in a wide range of electronic applications, including power supply devices, power amplifiers, power management circuits, audio amplifiers, and automotive electronics. This transistor is also compatible with a number of switching modes, including pulse width modulation (PWM), on/off, and 0 - 5V switching.

Overall, the UNR 51A1G0L is an impressive single, pre-biased, bipolar junction transistor which can be used in numerous different electronic applications. Its efficient design, low power dissipation characteristics, and wide temperature range make it an ideal choice for today’s modern electronic devices.

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