UNR51A5G0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR51A5G0LTR-ND |
Manufacturer Part#: |
UNR51A5G0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR51A5G0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 80mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-85 |
Supplier Device Package: | SMini3-F2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR51A5G0L is a single bipolar junction transistor (BJT) that has been pre-biased. It is capable of operating in a variety of environments and applications, making it an attractive choice for many types of circuits.
At its core, the UNR51A5G0L is a three-terminal device that is composed of two PN junctions, which are interconnected by a semiconductor material. The junctions are referred to as the emitter, base, and collector terminals.
The emitter terminal of the UNR51A5G0L is typically connected to a negative voltage, while the base and collector are connected to positive potentials. When the voltages applied to the emitter, base, and collector terminals are of the proper magnitude, the current (in the form of electrons) flowing through the transistor is controlled by the base voltage.
The UNR51A5G0L is designed to operate as a voltage amplifier. With the correct circuit configuration, the transistor is able to increase the relative output current as compared to the input current. This type of device can be used in a variety of applications, including audio amplifiers, charge pumps, RF amplifiers, and switching applications.
One of the most important features of the UNR51A5G0L is the fact that it has been pre-biased. This means that the transistor does not require additional external components to function properly. This greatly simplifies the device layout and makes for easier design.
The UNR51A5G0L has a wide range of collector current ratings, making it suitable for a variety of circuit designs. It is capable of operating at voltages ranging from 40V to 250V and can handle collector currents of up to 20A.
The UNR51A5G0L is designed to perform best in a wide range of temperature environments. It has an operating temperature range of -55°C to +150°C and is rated to dissipation power of up to 1W.
The UNR51A5G0L is well-suited to applications that demand fast switching speeds and high current output capacity. It is also extremely reliable and offers superior noise immunity to the effects of interference or vibration.
In conclusion, the UNR51A5G0L is a versatile and reliable single bipolar junction transistor that has been pre-biased for ease of use. It is capable of operating over a wide temperature and voltage range, as well as delivering high current outputs. Its applications range from audio amplifiers and charge pumps to RF amplifiers and switching applications.
The specific data is subject to PDF, and the above content is for reference
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