UNR51AEG0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR51AEG0LTR-ND |
Manufacturer Part#: |
UNR51AEG0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR51AEG0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 80mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-85 |
Supplier Device Package: | SMini3-F2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR51AEG0L is one of the most popular pre-biased Single Bipolar Junction Transistors (BJT) on the market today. It is commonly used for power applications, and its working principle is based on the phenomenon of minority carrier injection. Essentially, the UNR51AEG0L works by manipulating an electric field to cause a controlled flow of electrons across a PN junction.
When an external voltage is applied to the UNR51AEG0L, it activates the minority carrier injection process. This process creates what is known as a " injected " carrier, which is a type of electron that has been injected into the transistor by the external voltage. This injected electron then enters a region known as the " base-emitter region", where it creates a disruption in the electric field produced by the external voltage. This disruption in the electric field produces a new minority carrier, known as the "re-emitted" carrier, which is a carrier that has been created due to the disruption in the electric field.
The re-emitted carrier then flows into the base region of the transistor. This causes an imbalance in the flow of electrons within the transistor. This imbalance in turn creates a small current that is known as the "base current". This base current is what causes the current to flow in the transistor, and thus allows the UNR51AEG0L to control the flow of electrons across its PN junction.
One of the many advantages of the UNR51AEG0L is its ability to be pre-biased. This means that the UNR51AEG0L can be biased at the design stage, allowing it to be configured before it is put into use. This makes the device easier to configure, as well as increasing its efficiency. As a result, this makes the UNR51AEG0L a very popular choice for power applications.
The UNR51AEG0L can be used in a variety of applications, including motor control, switching and amplification. Its most popular application is motor control, as its pre-biased design makes it easy to configure and its efficient minority-carrier based working principle allows it to control the flow of electrons more accurately than other BJTs. In addition to this, its instability in the base region also makes it a good choice for amplification, as it can be used to increase the current level in circuits.
Overall, the UNR51AEG0L is one of the most popular pre-biased Single Bipolar Junction Transistors (BJT) on the market today due to its efficient working principle and pre-biased design. It is an ideal choice for motor control and amplification applications, as it can accurately control the flow of electrons and increase the current level in circuits.
The specific data is subject to PDF, and the above content is for reference
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