UNR5210G0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR5210G0LTR-ND |
Manufacturer Part#: |
UNR5210G0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR5210G0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Resistor - Base (R1): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-85 |
Supplier Device Package: | SMini3-F2 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
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UNR5210G0L is an NPN transistor designed for a variety of uses. This transistor is a single pre-biased unit, meaning it requires less energy or voltage to activate than simpler transistors. It is one of the most popular transistors available and is widely used in a variety of applications including audio amplifiers, automotive electronics, robotics, LED lighting, and more.
Its internal structure is made up of three sections: the collector, base, and emitter. The UNR5210G0L’s collector is where the input electrical current is brought in from power supply. The base is what controls the on/off action of the transistor and the emitter is where the current exits. The UNR5210G0L works as an on/off switch by allowing or not allowing electrical signals to enter and exit from the collector/emitter arrangement.
The differentiating factor of the UNR5210G0L is its pre-bias feature. This means that the forward-bias voltage (the voltage required to activate the transistor) is pre-set and automatically adjusted depending on the application. This makes it particularly suitable for use in low-power applications where low operating voltages are needed, such as in automative electronics.
In addition to its pre-biased feature, the UNR5210G0L is also constructed using an insulated metal oxide semiconductor material, or IMOS, which provides greater stability and power efficiency. This insulation also helps improve the UNR5210G0L’s audio quality, making it ideal for use in audio amplifiers.
Another benefit of the UNR5210G0L is its low power consumption. Its low power draw and efficient power management make it ideal for use in devices that require a low standby current and low operating temperature, such as LED lighting applications. Additionally, its fast switching times makes it suitable for use with high-frequency applications.
The UNR5210G0L is one of the most commonly used transistors available and is suitable for a variety of purposes. From audio amplifiers to LED lighting to robotics, this single pre-biased NPN transistor offers reliable and efficient performance. Its pre-biased feature and energy efficiency make it an ideal choice for those in need of low operating voltages, fast switching times, and a long service life.
The specific data is subject to PDF, and the above content is for reference
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