UNR521400L Discrete Semiconductor Products |
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Allicdata Part #: | UNR521400LTR-ND |
Manufacturer Part#: |
UNR521400L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR521400L Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SMini3-G1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR521400L is a single and pre-biased transistor. It is highly reliable for use in a variety of applications and technologies. It is important to understand the operating principle and application field of the UNR521400L in order for it to be used effectively.
Operating Principle
The UNR521400L is a NPN type bipolar junction transistor (BJT) which is a three terminal device. When the device is biased in the forward-active region, the two terminals (collector and emitter) form a small but efficient amplifier.
The base terminal of the UNR521400L controls the current flow between the collector and emitter through the forward-active region. When the base voltage is higher than the emitter voltage, the collector-emitter current increases, which is known as the active region of operation. The current flow is directly proportional to the base current, which is why the UNR521400L is considered an amplifier.
The UNR521400L is a pre-biased transistor, meaning that the base terminal is already biased to an appropriate voltage. This makes the transistor easier to use, as it requires less additional circuitry. The pre bias is generally produced by a resistor connected in series with the base terminal.
Application Field
The UNR521400L is used in a variety of application fields. It is commonly used as a switch in logic circuits, as an amplifier or oscillator in radio circuits, and as a power control device in power supplies. It has also been used in health monitoring and imaging systems, robotics and automation, industrial automation and control, automotive imaging, power amplifiers, and energy systems.
The UNR521400L is highly reliable and is useful for a variety of applications. It is also important to note that it can operate within a wide temperature range, making it versatile for different environmental conditions.
Conclusion
The UNR521400L is a pre-biased transistor used in a variety of application fields and technologies. It is an NPN type BJT which can be used as an amplifier, switch, or power control device. It is highly reliable and can operate within a wide temperature range, making it an ideal choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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