UNR521900L Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	1 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	150MHz
Power - Max:	150mW
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SMini3-G1

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UNR521900L application field and working principle

The UNR521900L is a single pre-biased, unipolar junction transistor (BJT) designed for amplifier applications. The device is designed to operate at high voltage, with a maximum voltage of 250V. It has a high frequency response, making it ideal for use in amplifier applications. The UNR521900L also features an integrated gate drive, making it easy to use in high-gain amplifier circuits.

Features

The UNR521900L features an integrated gate drive, making it ideal for use in high-gain amplifier applications. The device also features a high frequency response, making it suitable for use in both AC and DC applications. Additionally, the UNR521900L is pre-biased, meaning the user does not need to provide a bias voltage for the device.

Application Fields

The UNR521900L is a suitable device for use in high-voltage, high-current amplifier applications. It can be used in a wide range of applications, from power supplies and motor drives, to audio amplifiers and RF amplifiers. The device\'s integrated gate drive and high frequency response make it suitable for both AC and DC power applications.

Pinout Diagram

The UNR521900L has an 8-pin package. The pins are numbered from 1 to 8, with 1 being the drain and 8 being the source. Pin 4 is the gate, and is used to control the current flow through the device.

Working Principle

The working principle of the UNR521900L is based on the same principles as other BJTs. The device consists of three layers, the emitter, base, and collector. When a voltage is applied to the emitter and base, the current will flow from the emitter to the base and then to the collector. The current flow can then be controlled by adjusting the voltage applied to the gate. When the voltage across the base and emitter is increased, the current flow from the emitter to the collector will increase. This will cause a decrease in the voltage across the collector and emitter. Conversely, when the voltage across the base and emitter is decreased, the current flow from the emitter to the collector will decrease, resulting in a decrease in the voltage across the collector and emitter.

Conclusion

The UNR521900L is a single pre-biased BJT designed for amplifier applications. It features an integrated gate drive and high frequency response, making it suitable for use in both AC and DC applications. It can be used in a wide range of applications, from power supplies and motor drives, to audio amplifiers and RF amplifiers. The device works on the same principles as other BJTs, with the current flow between the emitter and collector controlled by adjusting the voltage applied to the gate.

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