UNR5219G0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR5219G0LTR-ND |
Manufacturer Part#: |
UNR5219G0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR5219G0L Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 1 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-85 |
Supplier Device Package: | SMini3-F2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR5219G0L is a single, pre-biased bipolar transistor typically used for switching applications. It is part of the UNR series of transistor products from Toshiba, which are designed for medium-speed power switching. The main features of the UNR5219G0L are a high current gain and a high reliability, making it suitable for applications that require robustness.
Applications
The UNR5219G00L is suitable for a variety of applications. In switching applications, the NPN transistor is used to control the current flowing from the collector to the emitter. This makes the UNR5219G00L ideal for use in digital and as well as analog signal processing circuits. It can be used in motor control applications and can handle up to 50 mA peak current. It can also be used in lighting applications as a switching element to control the on/off state of an LED. Additionally, the UNR5219G00L is highly reliable and temperature stable, making it suitable for extended-life applications such as security systems.
Working Principle
The UNR5219G00L is a single, pre-biased NPN bipolar power transistor designed for switching applications. It is designed using Toshiba’s proprietary manufacturing and testing processes, making it a reliable and robust solution. The transistor features built-in base-emitter junctions, which are pre-biased with a voltage of 5V for switching. This allows for minimal switching current, making the device suitable for low power applications, such as with LED lighting or security systems. The device is also temperature tolerant, capable of operating over a wide temperature range of -40°C to 150°C, making it suitable for industrial and automotive applications.
In addition, the transistor has high current gain, as well as a low saturation voltage. This makes it ideal for use in digital and analog signal processing circuits, as well as motor control and LED switching applications. The output power of the transistor is limited to 50mW, making it suitable for low power applications.
Conclusion
The UNR5219G00L is a single, pre-biased NPN bipolar power transistor designed for switching applications. It has a wide temperature range, high current gain, and a low saturation voltage. This makes the device suitable for applications such as digital and analog signal processing circuits, motor control, and LED switching. The device is also highly reliable and robust, making it suitable for extended-life applications. Overall, this makes the UNR5219G00L a great choice for a variety of switching applications.
The specific data is subject to PDF, and the above content is for reference
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