UNR521W00L Discrete Semiconductor Products |
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Allicdata Part #: | UNR521W00LTR-ND |
Manufacturer Part#: |
UNR521W00L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR521W00L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Emitter Base (R2): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 100MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SMini3-G1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR521W00L is a single, pre-biased Bipolar Junction Transistor (BJT) that is designed to meet the performance needs of many applications. The device can be configured to work in either a high side pre-biased or low side pre-biased package. It has a wide variety of limiting characteristics to accommodate a wide range of applications such as over-current protection, voltage sense switching and constant current sources.
In its most basic form, the UNR521W00L BJT consists of two p-type and n-type regions of a semiconductor. When small current is applied to the base region, a larger current can be obtained from the collector region, thus allowing it to be used as an amplifier. It also has a third terminal, known as the emitter, which is used to connect the circuit to the ground. The advantage of this type of BJT is that it does not require any external components for biasing, thus significantly simplifying the circuit design and improving the reliability of the device.
The UNR521W00L BJT can be configured to work in both high-side and low-side pre-biased packages. In the high-side pre-biased package, the base-emitter voltage is applied externally to the base region, thus allowing it to act as a switch or amplifier. On the other hand, in the low-side pre-biased package, the emitter is connected to the ground, and the base is connected to the supply voltage, thus making it suitable for voltage sensing switching or constant current sources.
The UNR521W00L BJT also features a wide range of safety features such as a thermal protection feature, which is implemented to protect the device from overheating. It also includes an over-current protection feature that helps prevent the device from being damaged due to excessive current. In addition, the device has an under-voltage protection feature that helps prevent the device from being damaged due to too low a voltage.
The UNR521W00L BJT has a wide range of applications in voltage sensing, over-current protection, constant current sources and switching applications. Its wide range of limiting characteristics makes it suitable for many different applications. The device is robust, reliable and cost-effective, making it an ideal choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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UNR511D00L | Panasonic El... | 0.05 $ | 12000 | TRANS PREBIAS PNP 150MW S... |
UNR511L00L | Panasonic El... | -- | 12000 | TRANS PREBIAS PNP 150MW S... |
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UNR51ANG0L | Panasonic El... | 0.05 $ | 3000 | TRANS PREBIAS PNP 150MW S... |
UNR52A3G0L | Panasonic El... | 0.05 $ | 3000 | TRANS PREBIAS NPN 150MW S... |
UNR52A6G0L | Panasonic El... | 0.05 $ | 3000 | TRANS PREBIAS NPN 150MW S... |
UNR52A8G0L | Panasonic El... | 0.05 $ | 3000 | TRANS PREBIAS NPN 150MW S... |
UNR52AFG0L | Panasonic El... | 0.05 $ | 3000 | TRANS PREBIAS NPN 150MW S... |
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