Allicdata Part #: | ZVN4306AV-ND |
Manufacturer Part#: |
ZVN4306AV |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 1.1A TO92-3 |
More Detail: | N-Channel 60V 1.1A (Ta) 850mW (Ta) Through Hole TO... |
DataSheet: | ZVN4306AV Datasheet/PDF |
Quantity: | 7604 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 1.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 330 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 850mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92-3 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
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The ZVN4306AV is a 30V single N-channel Enhancement-Mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, or otherwise known as a FET) designed for high-side switching applications
The ZVN4306AV is a popular choice for applications including power management, high-side switching, and battery management. It has several advantages over other FETs such as lower RDS(ON) and faster switching speeds. It is also capable of high-current switching and offers a high level of performance, making it ideal for a variety of applications.
The ZVN4306AV has a low-voltage gate threshold of 1.3V and high-current carrying capability of up to 14A. The device has a maximum drain-to-source breakdown voltage of 30V and a maximum Pulsed Drain Current of 56A. It has a low on-resistance of 13mΩ, and a low-capacitance between its Gate-Source, Gate-Drain, and Drain-Source. The device also features an extremely fast switching speed, with a turn-on and turn-off delay time of 600ns and 350ns respectively.
The ZVN4306AV operates in Enhancement-mode and is capable of efficiently controlling high-side switching applications, allowing for both high-power and low-power switching. It is designed specifically for use in high-side switching applications such as battery management, power management, motor control, and more. It provides a rugged construction to reduce the risk of heat degradation and offers excellent protection against short circuits and over-voltage conditions.
The working principle of the ZVN4306AV is relatively simple. When a voltage is applied to the Gate of the device, a channel of electrons is created between the two sources (Source and Drain), allowing electrical current to pass through the device. The current flow will be dependent on the voltage applied to the Gate and the resistance of the material between the Source and Drain. In the case of the ZVN4306AV, it is designed to be highly efficient, allowing for high-current switching with a low on-state resistance.
The ZVN4306AV is a versatile device that can be used in a wide range of applications, from power management to motor control. Its low-voltage gate threshold, high-current carrying capability, and fast switching speed make it an excellent choice for applications that require efficient and reliable high-side switching.
The specific data is subject to PDF, and the above content is for reference
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