Allicdata Part #: | ZVN4525GTC-ND |
Manufacturer Part#: |
ZVN4525GTC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 250V 0.31A SOT223 |
More Detail: | N-Channel 250V 310mA (Ta) 2W (Ta) Surface Mount SO... |
DataSheet: | ZVN4525GTC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 250V |
Current - Continuous Drain (Id) @ 25°C: | 310mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Rds On (Max) @ Id, Vgs: | 8.5 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 1.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 3.65nC @ 10V |
Vgs (Max): | ±40V |
Input Capacitance (Ciss) (Max) @ Vds: | 72pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-223 |
Package / Case: | TO-261-4, TO-261AA |
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ZVN4525GTC Application Field and Working Principle
The ZVN4525GTC are N–Channel enhancement–mode MOSFETs with very small dimensions and a low on resistance. They are suitable for an automated assembly on printed circuit boards. Insulated packages, molded in Black LCP, UL94V–0 rated material, are used for the devices.
Application Fields
The low on–resistance of the ZVN4525GTC makes it ideal for a variety of particularly high–frequency switching applications, such as fast–switching load and signal connection, signal and voltage level sensing, battery protection, and timing. It is especially well–adapted for use in battery–drive electronic products and signal transmission between subsystems.
Working Principle
A MOSFET is a voltage–controlled transistor that consists of an insulated gate, source, and drain terminal. It works by using a voltage, or gate–to–source voltage, to control the conductivity of a channel between the source and drain. When the gate voltage increases, the conductivity of the channel increases, allowing electrons to flow from the source to the drain. When the gate voltage decreases, the conductivity of the channel decreases, prohibiting electrons from flowing between the source and drain.
In the ZVN4525GTC, the source is connected to the negative voltage and the Gate is driven by a positive voltage to turn on the transistor. When the Gate voltage reaches the threshold of 4V, the channel between the Source and Drain is activated, allowing electrons to flow between them. When the Gate voltage decreases or reaches 0V, the channel is deactivated and electrons are not allowed to flow.
Advantages of ZVN4525GTC
The ZVN4525GTC is an ideal choice for many switching applications due to its low on–resistance and small form factor. The low on resistance of the device allows it to switch quickly and efficiently, while its small size makes it easy to integrate into a printed circuit board. The ZVN4525GTC also provides protection against short circuits and electrostatic discharge, making it a safe and reliable choice.
Conclusion
The ZVN4525GTC is an ideal choice for many high–frequency switching applications due to its low on–resistance and small form factor. It is especially well–adapted for use in battery–drive electronic products and signal transmission between subsystems. It also provides protection against short circuits and electrostatic discharge, making it a safe and reliable choice.
The specific data is subject to PDF, and the above content is for reference
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