ZVN4206ASTOA

FET Feature:	--
Power Dissipation (Max):	700mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	E-Line (TO-92 compatible)
Package / Case:	E-Line-3
Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	1 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:	3V @ 1mA
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	100pF @ 25V

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The ZVN4206A N-channel low-voltage enhancement mode Field-Effect Transistor (FET or MOSFET) is an efficient and reliable device comprising an integrated source, drain and gate structure to allow controlling a voltage or current flow. It is capable of switching at very high frequency and its features makes it an ideal choice for power handling applications. The ZVN4206A is particularly suitable for mobile sound system, communication applications, as well as a range of digital power supply and switching applications. The ZVN4206A is a four-terminal device with one source terminal, one drain terminal, and two gate terminals. It essentially acts like a voltage-controlled switch, with the two gate terminals applying an input voltage that can be used to modulate the device\'s conductance from fully off to fully on. This makes the ZVN4206A very efficient in controlling and managing power supply between two different voltage levels. The device operates on the principle of generating two distinct levels of voltage potential, i.e. a conduction voltage and an enabled voltage, between the two gate terminals. When a voltage is applied to the first gate terminal, the conduction voltage is present across the second gate terminal and the drain terminal, and it is at this point when the device is turned on. An applied voltage at the second gate terminal is used to control the drain-source current and to enable the device’s current conduction. The enabled voltage is always a lower voltage than the conduction voltage and, thus, controlling the drain-source current through the second gate terminal, will also control the conduction voltage. Moreover, the high speed of switching, coupled with high current and voltage handling capabilities, makes the ZVN4206A an excellent choice for switching and controlling power in a range of digital applications. The device features a “soft-start” function and can be programmed to delay its start-up for a certain amount of time before switching off and on. This ensures that the power supply remains functioning for the shortest possible duration, avoiding any unnecessary power losses. In summary, the ZVN4206A is an efficient and reliable N-channel low-voltage enhancement mode FET or MOSFET, suitable for a wide range of digital power applications. Its efficient conduction and power handling capability, combined with its high speed, make it an ideal choice for a variety of applications. In addition, the device features a “soft-start” function, enabling it to minimize power losses during switching cycles.