ZVN4310GTC Allicdata Electronics
Allicdata Part #:

ZVN4310GTC-ND

Manufacturer Part#:

ZVN4310GTC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 100V 1.67A SOT223
More Detail: N-Channel 100V 1.67A (Ta) 3W (Ta) Surface Mount SO...
DataSheet: ZVN4310GTC datasheetZVN4310GTC Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.67A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 540 mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
FET Feature: --
Power Dissipation (Max): 3W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
Description

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ZVN4310GTC application field and working principle

The ZVN4310GTC is an enhancement-mode, N-channel, vertical double-diffused Metal Oxide Field Effect Transistor (MOSFET) fabricated on high-voltage DMOS process in a ULGA package. The device is designed to have low on-resistance and is prouced using high-voltage, thick-oxide processing. This ensures that the device can handle high peak currents and has a very low RDS(ON). This powerful combination makes it ideal for a wide range of applications, including power supplies, DC-DC converters, and brushless DC motor controls.

Features

  • Very Low On-Resistance RDS(on): 10mΩ Max.
  • High Voltage Rating: 150V
  • AECQ101 Qualified is Available (full series)
  • ABS Max250V
  • Lead-bonded

Typical Applications

  • DC/DC Converters
  • Off-line Supplies
  • Switching Regulators
  • Solar-power Systems

Working Principle

The working principle of a MOSFET is similar to the operation of a JFET. When a voltage is applied to the gate of the MOSFET, a field is created in the region between the gate and the channel. This field repels the electrons in the channel region, creating a resistance to current flow. The higher the voltage applied to the gate, the lower the resistance and the greater the current flow through the channel. This is the basic operation of the MOSFET.

When the MOSFET is built in the form of a vertical double-diffused MOSFET, the gate is connected to the substrate through an insulated layer of metal oxide. This insulation layer is extremely thin, creating a region of relatively high electric field. This improved design, along with the use of special high-voltage processing techniques, allows the MOSFET to handle high peak currents and achieve very low RDS(on).

The ZVN4310GTC is an ideal choice for applications that require high peak currents and excellent power efficiency. Its low RDS(on) and high voltage rating of 150V make it a great choice for high-voltage power supplies, DC-DC converters, and brushless DC motor controls.

Conclusion

The ZVN4310GTC is a high-performance, low-cost MOSFET designed for a variety of applications. With its high voltage rating, low on-resistance, and special thick-oxide processing, it is well suited for power supplies, DC-DC converters, and brushless DC motor controls. This powerful device is a great choice for applications that require low-cost, high-efficiency power delivery.

The specific data is subject to PDF, and the above content is for reference

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