ZVN4306AVSTZ

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The ZVN4306AVSTZ is an advanced insulated-gate bipolar transistor (IGBT) module featuring low gate-source and gate-drain capacitances and low on-resistance. The advanced packaging ensures high thermal conductivity and faster switching speeds. It is a popular device for applications such as low-voltage DC-DC converters, high-power switching, Class D audio amplifiers, and PFC converters.

The ZVN4306AVSTZ belongs to the family of IGBT\'s and is technically a Field Effect Transistor (FET). It is a type of single-mode FET, meaning that it is comprised of only one conduction channel and is capable of controlling relatively large currents. It differs from conventional FETs in several important ways. Its construction is similar to that of a Bipolar Junction Transistor (BJT), with two junctions that allow a single gate voltage to regulate the flow of current. However, it features a higher breakdown voltage, higher switching speed, and much higher input impedance than BJT devices. The internal structure of the ZVN4306AVSTZ is a bipolar-inverse parallel FET (BIPFET) which eliminates the need for noise reduction in applications where noise suppression is required.

The ZVN4306AVSTZ is a unipolar device, meaning that it is constructed using both N-type and P-type semiconductor materials. The internal structure includes a P-channel MOSFET for the gate and N-channel MOSFET for the source and drain. This combination allows the device to have both positive and negative voltage terminals unlike BJTs which require positive voltage terminals. The ZVN4306AVSTZ also features an integrated bypass diode to reduce EMI emissions from the device. The IGBT structure also allows for simpler control of power dissipation and gate current compared to BJTs.

The main advantages of the ZVN4306AVSTZ over bipolar transistors are its higher breakdown voltage, lower on-state voltage drop, higher current carrying capacity and faster switching speeds. The device also features a longer lifetime and is resistant to over-temperature and over-voltage conditions. The ZVN4306AVSTZ is also well-suited for applications that require a low gate charge such as switching converters, motor drives and pulse-width modulation (PWM) systems. The device’s high efficiency and compact design also make it attractive for use in medium- to high-power DC-DC converters, Class D audio amplifiers, and power factor correction circuits.

In summary, the ZVN4306AVSTZ is a versatile single-mode insulated-gate bipolar transistor (IGBT) module, featuring low gate-source and gate-drain capacitances and low on-resistance. It is ideal for applications requiring high-power switching, fast switching speeds, and low gate charges. Its construction includes a P-channel MOSFET for the gate and N-channel MOSFET for the source and drain. Its unique structure allows it to function as a unipolar device, making it well-suited for DC-DC converters, PWM systems, and power factor correction circuits.

The specific data is subject to PDF, and the above content is for reference