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 --15203 Item(s) In Category:Transistors - FETs, MOSFETs - Single

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Photo Allicdata Part# Mft.Part# Company Spec. QTY. Pricing(USD) PDF
MIC94030YM4-TR 576-2936-2-ND MIC94030YM4-TR Microchip Technology
View more  Series: TinyFET
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 16V
 Current - Continuous Drain (Id) @ 25C: 1A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
 Rds On (Max) @ Id, Vgs: 450 mOhm @ 100mA, 10V
 Vgs(th) (Max) @ Id: 1.4V @ 250A
 Vgs (Max): 16V
 Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 12V
 Power Dissipation (Max): 568mW (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: SOT-143
 Package / Case: TO-253-4, TO-253AA
 Base Part Number: MIC94030
1000
Order

3000+:

$0.318

 576-2936-2-ND Datasheet
RF6E045AJTCR RF6E045AJTCRTR-
ND		 RF6E045AJTCR ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 4.5A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 23.7 mOhm @ 4.5A, 4.5V
 Vgs(th) (Max) @ Id: 1.5V @ 1mA
 Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V
 Vgs (Max): 12V
 Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
 Power Dissipation (Max): 1W (Tc)
 Operating Temperature: 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: TUMT6
 Package / Case: 6-SMD, Flat Leads
1000
Order

3000+:

$0.1318

 RF6E045AJTCRTR-ND Datasheet
2SJ305TE85LF 2SJ305TE85LFTR-
ND		 2SJ305TE85LF Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 200mA (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 2.5V
 Rds On (Max) @ Id, Vgs: 4 Ohm @ 50mA, 2.5V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 3V
 Power Dissipation (Max): 200mW (Ta)
 Operating Temperature: 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: SC-59
 Package / Case: TO-236-3, SC-59, SOT-23-3
1000
Order

1+:

$0

 2SJ305TE85LFTR-ND Datasheet
RMW200N03TB RMW200N03TBTR-N
D		 RMW200N03TB ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 20A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V
 Vgs(th) (Max) @ Id: 2.5V @ 1mA
 Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 15V
 Power Dissipation (Max): 3W (Ta)
 Operating Temperature: 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-PSOP
 Package / Case: 8-SMD, Flat Lead
2500
Order

2500+:

$0.4159

 RMW200N03TBTR-ND Datasheet
SIR798DP-T1-GE3 SIR798DP-T1-GE3
TR-ND		 SIR798DP-T1-GE3 Vishay Siliconix
View more  Packaging: Tape & Reel (TR)
 Part Status: Last Time Buy
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 60A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 Rds On (Max) @ Id, Vgs: 2.05 Ohm @ 20A, 10V
 Vgs(th) (Max) @ Id: 2.5V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 15V
 FET Feature: Schottky Diode (Body)
 Power Dissipation (Max): 83W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: PowerPAK SO-8
 Package / Case: PowerPAK SO-8
1000
Order

3000+:

$0.4217

 SIR798DP-T1-GE3TR-ND Datasheet
CSD23203W 296-40001-2-ND CSD23203W Texas Instruments
View more  Series: NexFET
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 8V
 Current - Continuous Drain (Id) @ 25C: 3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
 Rds On (Max) @ Id, Vgs: 19.4 mOhm @ 1.5A, 4.5V
 Vgs(th) (Max) @ Id: 1.1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4.5V
 Vgs (Max): -6V
 Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 4V
 Power Dissipation (Max): 750mW (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 6-DSBGA
 Package / Case: 6-UFBGA, DSBGA
1000
Order

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 296-40001-2-ND Datasheet
RTL035N03TR RTL035N03TR-ND RTL035N03TR ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 3.5A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
 Rds On (Max) @ Id, Vgs: 56 mOhm @ 3.5A, 4.5V
 Vgs(th) (Max) @ Id: 1.5V @ 1mA
 Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4.5V
 Vgs (Max): 12V
 Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
 Power Dissipation (Max): 1W (Ta)
 Operating Temperature: 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: TUMT6
 Package / Case: 6-SMD, Flat Leads
1000
Order

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 RTL035N03TR-ND Datasheet
RS1E130GNTB RS1E130GNTBTR-N
D		 RS1E130GNTB ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 13A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 13A, 10V
 Vgs(th) (Max) @ Id: 2.5V @ 1mA
 Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 15V
 Power Dissipation (Max): 3W (Ta), 22.2W (Tc)
 Operating Temperature: 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-HSOP
 Package / Case: 8-PowerTDFN
1000
Order

2500+:

$0.1336

 RS1E130GNTBTR-ND Datasheet
DMP2021UFDE-7 DMP2021UFDE-7DI
TR-ND		 DMP2021UFDE-7 Diodes Incorporated
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 20V
 Current - Continuous Drain (Id) @ 25C: 11.1A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
 Rds On (Max) @ Id, Vgs: 16 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 59nC @ 8V
 Vgs (Max): 10V
 Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 15V
 Power Dissipation (Max): 1.9W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: U-DFN2020-6 (Type E)
 Package / Case: 6-UDFN Exposed Pad
1000
Order

3000+:

$0.1334

 DMP2021UFDE-7DITR-ND Datasheet
SUD45P03-09-GE3 SUD45P03-09-GE3
TR-ND		 SUD45P03-09-GE3 Vishay Siliconix
View more  Series: TrenchFET
 Packaging: Tape & Reel (TR)
 Part Status: Last Time Buy
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 45A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 20A, 10V
 Vgs(th) (Max) @ Id: 2.5V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V
 Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: TO-252, (D-Pak)
 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
8000
Order

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 SUD45P03-09-GE3TR-ND Datasheet
CTLDM3590 TR CTLDM3590TR-ND CTLDM3590 TR Central Semiconductor Corp
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 20V
 Current - Continuous Drain (Id) @ 25C: 160mA (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
 Rds On (Max) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 0.46nC @ 4.5V
 Vgs (Max): 8V
 Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 15V
 Power Dissipation (Max): 125mW (Ta)
 Operating Temperature: -65C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: TLM3D6D8
 Package / Case: 3-XFDFN
1000
Order

1+:

$0

 CTLDM3590TR-ND Datasheet
CTLDM7590 TR CTLDM7590TR-ND CTLDM7590 TR Central Semiconductor Corp
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 20V
 Current - Continuous Drain (Id) @ 25C: 140mA (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
 Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
 Vgs (Max): 8V
 Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 15V
 Power Dissipation (Max): 125mW (Ta)
 Operating Temperature: -65C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: TLM3D6D8
 Package / Case: 3-XFDFN
1000
Order

1+:

$0

 CTLDM7590TR-ND Datasheet
CSD25211W1015 296-36578-2-ND CSD25211W1015 Texas Instruments
View more  Series: NexFET
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 20V
 Current - Continuous Drain (Id) @ 25C: 3.2A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
 Rds On (Max) @ Id, Vgs: 33 mOhm @ 1.5A, 4.5V
 Vgs(th) (Max) @ Id: 1.1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V
 Vgs (Max): -6V
 Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 10V
 Power Dissipation (Max): 1W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 6-DSBGA (1x1.5)
 Package / Case: 6-UFBGA, DSBGA
1000
Order

--

 296-36578-2-ND Datasheet
MCQ4407-TP MCQ4407-TPMSTR-
ND		 MCQ4407-TP Micro Commercial Co
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 12A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V
 Vgs(th) (Max) @ Id: 2.2V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 15V
 Power Dissipation (Max): 1.4W (Ta)
 Operating Temperature: 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SOP
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

4000+:

$0.1348

 MCQ4407-TPMSTR-ND Datasheet
MCQ4438-TP MCQ4438-TPMSTR-
ND		 MCQ4438-TP Micro Commercial Co
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 60V
 Current - Continuous Drain (Id) @ 25C: 8.2A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 36 mOhm @ 7.9A, 4.5V
 Vgs(th) (Max) @ Id: 3V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V
 Power Dissipation (Max): 1.25W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SOP
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

4000+:

$0.1348

 MCQ4438-TPMSTR-ND Datasheet
NTLJS3113PT1G NTLJS3113PT1GOS
TR-ND		 NTLJS3113PT1G ON Semiconductor
View more  Series: Cool
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 20V
 Current - Continuous Drain (Id) @ 25C: 3.5A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
 Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 4.5V
 Vgs (Max): 8V
 Input Capacitance (Ciss) (Max) @ Vds: 1329pF @ 16V
 Power Dissipation (Max): 700mW (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 6-WDFN (2x2)
 Package / Case: 6-WDFN Exposed Pad
1000
Order

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 NTLJS3113PT1GOSTR-ND Datasheet
BUK7D25-40EX 1727-7412-2-ND BUK7D25-40EX Nexperia USA Inc.
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 40V
 Current - Continuous Drain (Id) @ 25C: 8A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 20V
 Power Dissipation (Max): 15W (Tc)
 Operating Temperature: -55C ~ 175C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: DFN2020MD-6
 Package / Case: 6-UDFN Exposed Pad
1000
Order

3000+:

$0.1348

 1727-7412-2-ND Datasheet
SSM5G10TU(TE85L,F) SSM5G10TU(TE85L
F)TR-ND		 SSM5G10TU(TE85L
,F)		 Toshiba Semiconductor and Storage
View more  Series: U-MOSIII
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 20V
 Current - Continuous Drain (Id) @ 25C: 1.5A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
 Rds On (Max) @ Id, Vgs: 213 mOhm @ 1A, 4V
 Vgs(th) (Max) @ Id: 1V @ 1mA
 Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V
 Vgs (Max): 8V
 Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
 FET Feature: Schottky Diode (Isolated)
 Power Dissipation (Max): 500mW (Ta)
 Operating Temperature: 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: UFV
 Package / Case: 6-SMD (5 Leads), Flat Lead
1000
Order

1+:

$0

 SSM5G10TU(TE85LF)TR-ND Datasheet
FDMS0312AS FDMS0312ASTR-ND FDMS0312AS ON Semiconductor
View more  Series: PowerTrench, SyncFET
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 18A (Ta), 22A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 Rds On (Max) @ Id, Vgs: 5 mOhm @ 18A, 10V
 Vgs(th) (Max) @ Id: 3V @ 1mA
 Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1815pF @ 15V
 Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-PQFN (5x6)
 Package / Case: 8-PowerTDFN
1000
Order

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 FDMS0312ASTR-ND Datasheet
PMPB55ENEAX 1727-2730-2-ND PMPB55ENEAX Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 60V
 Current - Continuous Drain (Id) @ 25C: 4A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 Rds On (Max) @ Id, Vgs: 56 mOhm @ 10A, 10V
 Vgs(th) (Max) @ Id: 2.7V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 30V
 Power Dissipation (Max): 1.65W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: DFN2020MD-6
 Package / Case: 6-UDFN Exposed Pad
1000
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3000+:

$0.1348

 1727-2730-2-ND Datasheet
SIA811ADJ-T1-GE3 SIA811ADJ-T1-GE
3TR-ND		 SIA811ADJ-T1-GE
3		 Vishay Siliconix
View more  Series: LITTLE FOOT
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 20V
 Current - Continuous Drain (Id) @ 25C: 4.5A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
 Rds On (Max) @ Id, Vgs: 116 mOhm @ 2.8A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 13nC @ 8V
 Vgs (Max): 8V
 Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 10V
 FET Feature: Schottky Diode (Isolated)
 Power Dissipation (Max): 1.8W (Ta), 6.5W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: PowerPAK SC-70-6 Dual
 Package / Case: PowerPAK SC-70-6 Dual
1000
Order

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 SIA811ADJ-T1-GE3TR-ND Datasheet
DMP6110SSS-13 DMP6110SSS-13DI
TR-ND		 DMP6110SSS-13 Diodes Incorporated
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 60V
 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 Rds On (Max) @ Id, Vgs: 110 mOhm @ 4.5A, 10V
 Vgs(th) (Max) @ Id: 3V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 30V
 Power Dissipation (Max): 1.5W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
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 DMP6110SSS-13DITR-ND Datasheet
SIA427ADJ-T1-GE3 SIA427ADJ-T1-GE
3TR-ND		 SIA427ADJ-T1-GE
3		 Vishay Siliconix
View more  Series: TrenchFET
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 8V
 Current - Continuous Drain (Id) @ 25C: 12A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
 Rds On (Max) @ Id, Vgs: 16 mOhm @ 8.2A, 4.5V
 Vgs(th) (Max) @ Id: 800mV @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
 Vgs (Max): 5V
 Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 4V
 Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: PowerPAK SC-70-6 Single
 Package / Case: PowerPAK SC-70-6
1000
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3000+:

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 SIA427ADJ-T1-GE3TR-ND Datasheet
AON6370 785-1743-2-ND AON6370 Alpha & Omega Semiconductor Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 23A (Ta), 47A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 20A, 10V
 Vgs(th) (Max) @ Id: 2.2V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 15V
 Power Dissipation (Max): 6.2W (Ta), 26W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-DFN (5x6)
 Package / Case: 8-PowerSMD, Flat Leads
1000
Order

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 785-1743-2-ND Datasheet
FDS8880 FDS8880TR-ND FDS8880 ON Semiconductor
View more  Series: PowerTrench
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 11.6A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 Rds On (Max) @ Id, Vgs: 10 mOhm @ 11.6A, 10V
 Vgs(th) (Max) @ Id: 2.5V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 15V
 Power Dissipation (Max): 2.5W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

--

 FDS8880TR-ND Datasheet
MVSF2N02ELT1G MVSF2N02ELT1GOS
TR-ND		 MVSF2N02ELT1G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Not For New Designs
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 20V
 Current - Continuous Drain (Id) @ 25C: 2.8A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
 Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.6A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4V
 Vgs (Max): 8V
 Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 5V
 Power Dissipation (Max): 1.25W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: SOT-23-3 (TO-236)
 Package / Case: TO-236-3, SC-59, SOT-23-3
1000
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3000+:

$0.1382

 MVSF2N02ELT1GOSTR-ND Datasheet
DMN1004UFV-7 DMN1004UFV-7DIT
R-ND		 DMN1004UFV-7 Diodes Incorporated
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 12V
 Current - Continuous Drain (Id) @ 25C: 70A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
 Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 15A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 47nC @ 8V
 Vgs (Max): 8V
 Input Capacitance (Ciss) (Max) @ Vds: 2385pF @ 6V
 Power Dissipation (Max): 1.9W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: PowerDI3333-8
 Package / Case: 8-PowerVDFN
1000
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2000+:

$0.1376

 DMN1004UFV-7DITR-ND Datasheet
RSF014N03TL RSF014N03TLTR-N
D		 RSF014N03TL ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 1.4A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
 Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V
 Vgs(th) (Max) @ Id: 2.5V @ 1mA
 Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
 Power Dissipation (Max): 800mW (Ta)
 Operating Temperature: 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: TUMT3
 Package / Case: 3-SMD, Flat Leads
1000
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3000+:

$0.137

 RSF014N03TLTR-ND Datasheet
RS1E200BNTB RS1E200BNTBTR-N
D		 RS1E200BNTB ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 20A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 20A, 10V
 Vgs(th) (Max) @ Id: 2.5V @ 1mA
 Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 15V
 Power Dissipation (Max): 3W (Ta), 25W (Tc)
 Operating Temperature: 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-HSOP
 Package / Case: 8-PowerTDFN
1000
Order

2500+:

$0.137

 RS1E200BNTBTR-ND Datasheet
DMN3010LK3-13 DMN3010LK3-13DI
TR-ND		 DMN3010LK3-13 Diodes Incorporated
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 13.1A (Ta), 43A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 18A, 10V
 Vgs(th) (Max) @ Id: 2.5V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 2075pF @ 15V
 Power Dissipation (Max): 1.6W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: TO-252-3
 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
1000
Order

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 DMN3010LK3-13DITR-ND Datasheet
NTMFS4925NT1G NTMFS4925NT1GOS
TR-ND		 NTMFS4925NT1G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 9.7A (Ta), 48A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 30A, 10V
 Vgs(th) (Max) @ Id: 2.2V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1264pF @ 15V
 Power Dissipation (Max): 920mW (Ta), 23.2W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 5-DFN (5x6) (8-SOFL)
 Package / Case: 8-PowerTDFN, 5 Leads
1000
Order

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 NTMFS4925NT1GOSTR-ND Datasheet
SI8483DB-T2-E1 SI8483DB-T2-E1T
R-ND		 SI8483DB-T2-E1 Vishay Siliconix
View more  Series: TrenchFET
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 12V
 Current - Continuous Drain (Id) @ 25C: 16A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
 Rds On (Max) @ Id, Vgs: 26 mOhm @ 1.5A, 4.5V
 Vgs(th) (Max) @ Id: 800mV @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
 Vgs (Max): 10V
 Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 6V
 Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 6-Micro Foot (1.5x1)
 Package / Case: 6-UFBGA
1000
Order

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 SI8483DB-T2-E1TR-ND Datasheet
RSY160P05TL RSY160P05TLTR-N
D		 RSY160P05TL ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Not For New Designs
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 45V
 Current - Continuous Drain (Id) @ 25C: 16A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
 Rds On (Max) @ Id, Vgs: 50 mOhm @ 16A, 10V
 Vgs(th) (Max) @ Id: 2.5V @ 1mA
 Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 5V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V
 Power Dissipation (Max): 20W (Tc)
 Operating Temperature: 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: TCPT3
 Package / Case: 3-SMD, Flat Leads
2500
Order

2500+:

$0.4402

 RSY160P05TLTR-ND Datasheet
CEDM7001 TR CEDM7001TR-ND CEDM7001 TR Central Semiconductor Corp
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 20V
 Current - Continuous Drain (Id) @ 25C: 100mA (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
 Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V
 Vgs(th) (Max) @ Id: 900mV @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 0.57nC @ 4.5V
 Vgs (Max): 10V
 Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 3V
 Power Dissipation (Max): 100mW (Ta)
 Operating Temperature: -65C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: SOT-883
 Package / Case: SC-101, SOT-883
1000
Order

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 CEDM7001TR-ND Datasheet
RW1A020ZPT2R RW1A020ZPT2RTR-
ND		 RW1A020ZPT2R ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Not For New Designs
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 12V
 Current - Continuous Drain (Id) @ 25C: 2A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
 Rds On (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 1mA
 Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
 Vgs (Max): 10V
 Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 6V
 Power Dissipation (Max): 700mW (Ta)
 Operating Temperature: 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 6-WEMT
 Package / Case: SOT-563, SOT-666
1000
Order

8000+:

$0.1303

 RW1A020ZPT2RTR-ND Datasheet
CEDM8001 TR CEDM8001TR-ND CEDM8001 TR Central Semiconductor Corp
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 20V
 Current - Continuous Drain (Id) @ 25C: 100mA (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
 Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
 Vgs(th) (Max) @ Id: 1.1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 0.66nC @ 4.5V
 Vgs (Max): 10V
 Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 3V
 Power Dissipation (Max): 100mW (Ta)
 Operating Temperature: -65C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: SOT-883
 Package / Case: SC-101, SOT-883
1000
Order

8000+:

$0.1313

 CEDM8001TR-ND Datasheet
RSQ020N03TR RSQ020N03TR-ND RSQ020N03TR ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 2A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
 Rds On (Max) @ Id, Vgs: 134 mOhm @ 2A, 10V
 Vgs(th) (Max) @ Id: 2.5V @ 1mA
 Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 5V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
 Power Dissipation (Max): 600mW (Ta)
 Operating Temperature: 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: TSMT6 (SC-95)
 Package / Case: SOT-23-6 Thin, TSOT-23-6
1000
Order

3000+:

$0.1651

 RSQ020N03TR-ND Datasheet
PMPB20XNEAX 1727-2704-2-ND PMPB20XNEAX Nexperia USA Inc.
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 20V
 Current - Continuous Drain (Id) @ 25C: 7.5A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
 Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.5A, 4.5V
 Vgs(th) (Max) @ Id: 1.25V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
 Vgs (Max): 12V
 Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 10V
 Power Dissipation (Max): 460mW (Ta), 12.5W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: DFN2020MD-6
 Package / Case: 6-UDFN Exposed Pad
1000
Order

3000+:

$0.1404

 1727-2704-2-ND Datasheet
QS5U12TR QS5U12TR-ND QS5U12TR ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 2A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
 Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
 Vgs(th) (Max) @ Id: 1.5V @ 1mA
 Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V
 Vgs (Max): 12V
 Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 10V
 FET Feature: Schottky Diode (Isolated)
 Power Dissipation (Max): 1.25W (Ta)
 Operating Temperature: 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: TSMT5
 Package / Case: SOT-23-5 Thin, TSOT-23-5
1000
Order

3000+:

$0.1662

 QS5U12TR-ND Datasheet
FDG327NZ FDG327NZFSTR-ND FDG327NZ ON Semiconductor
View more  Series: PowerTrench
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 20V
 Current - Continuous Drain (Id) @ 25C: 1.5A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
 Rds On (Max) @ Id, Vgs: 90 mOhm @ 1.5A, 4.5V
 Vgs(th) (Max) @ Id: 1.5V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
 Vgs (Max): 8V
 Input Capacitance (Ciss) (Max) @ Vds: 412pF @ 10V
 Power Dissipation (Max): 420mW (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: SC-70-6
 Package / Case: 6-TSSOP, SC-88, SOT-363
1000
Order

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 FDG327NZFSTR-ND Datasheet
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