DMN1004UFV-7

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DMN1004UFV-7 is a high-performance and low-cost N-channel MOSFET device. It is a single junction field effect transistor (FET) and is a popular device for analog and mixed-signal applications, as well as power management applications, such as switching and DC-DC conversion. It can be used in many applications such as, switching, DC-DC conversion, level shifting, signal amplification, voltage regulation and power management.

It provides excellent on-channel resistance values (RDSon) in the sub 1 ohm range and incorporates low gate-source leakage currents (IGSS) in the low single-digit nano ampere range. This device is designed to handle peak voltages up to 30V with an absolute maximum voltage of 30V. It also has a drain-source breakdown voltage of 20V. When operating this device at high temperatures, thermal shutdown protection is offered, limiting the temperature of the device to 145 °C.

The DMN1004UFV-7’s working principle relies on the concept of Threshold Voltage or (VTH or Vgs(th)). This is the amount of voltage required to switch the MOSFET from its off-state to its on-state. This thresholds voltage, or gate-source voltage (Vgs), is necessary for the MOSFET to turn on, and can be either positive or negative voltage, depending on the application. For the DMN1004UFV-7, the threshold voltage is -2.1V.

To control an N-Channel MOSFET, a certain voltage must be applied between the gate and source terminals (Vgs). With the DMN1004UFV-7, when the voltage that is applied to the Gate and Source is greater than the threshold voltage, the MOSFET enters its active region of conduction, allowing current to flow between the Drain and Source (ID). When the voltage between the Gate and Source (Vgs) is below the threshold voltage, the MOSFET is turned off and no current flows from the Drain and Source terminals.

Without a voltage across the Gate and Source, there is no current flow through the channel. This means that a control signal must be applied to the Gate, turning the MOSFET off or on, depending on the voltage applied. This control signal can be provided by a number of sources such as, an external voltage source, a microcontroller, a logic gate, or a low voltage FET driver IC. Once the threshold voltage has been exceeded and the MOSFET has been activated, the gate-source voltage may then be varied to the desired ID value.

The DMN1004UFV-7 is well-suited for digital and analog control applications, such as power management, level shifting, signal amplification, voltage regulation and switching. It can also be used in a variety of power applications, such as, motor control, inverter control, solenoid control, and power management. It is highly reliable and offers excellent switching performance and low on-resistance.

Overall, the DMN1004UFV-7 is a highly reliable and cost effective device, that is well suited for a variety of applications, in both analog and digital control. It is a robust device that can be used in a plethora of applications, with excellent switching performance and low on-resistance.

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