NTLJS3113PT1G Discrete Semiconductor Products

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NTLJS3113PT1G is a small signal N−channel enhancement mode field effect transistor (FET) with a high side gate. It has a low profile, low on-state resistance and a small surface mount package. This FET is well-suited for use in applications such as TV receivers and audio amplifiers.

In terms of its construction, the NTLJS3113PT1G is based on a high power, high speed lateral N−channel MOSFET fabrication process. The device is built using a high dielectric strength (20V) dielectric material and features an integrated gate protection diode. The device features an on-state resistance of 32mΩ and a gate voltage of -3V.

In terms of its functioning, the NTLJS3113PT1G is typically used for switching applications. It can be used in combination with a power supply to switch loads under selected conditions. The FET is designed to have a low input capacitance and a fast recovery time to ensure optimal power efficiency and low power consumption. The device also features a built-in gate protection circuit that helps prevent electrical overstress and thermal breakdown.

The NTLJS3113PT1G is ideal for use in a variety of switching applications such as telecom and data communications equipment. It is suitable for use in applications that require low input capacitance and low on-state resistance. The device is also suitable for use in high frequency switching applications such as switching regulators and power supplies.

When incorporated into a circuit, the NTLJS3113PT1G generally operates in enhancement mode. In this mode of operation, the device acts as a variable resistor whose impedance will vary according to the bias voltage applied to the gate. The impedance of the device increases with increasing bias voltage and decreases with decreasing bias voltage. This allows for efficient power transmission, allowing for a high level of performance and efficiency.

The NTLJS3113PT1G is an excellent choice for use in a variety of switching applications. It has a low input capacitance and a fast recovery time, ensuring optimal power efficiency and low power consumption. The device also features a built-in gate protection circuit, helping to prevent electrical overstress and thermal breakdown. Furthermore, the FET is designed to operate in enhancement mode, allowing for efficient power transmission and a high level of performance and efficiency.

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