SIA427ADJ-T1-GE3

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The SIA427ADJ-T1-GE3 is a single Power MOSFET transistor available in TO3-3L packages from ON Semiconductor. It is used in a wide range of applications such as automotive, computing, consumer electronics, industrial and lighting.

The power MOSFET SIA427ADJ-T1-GE3 is a N-Channel Enhancement Mode and has a Drain-Source Voltage rating of 120V. It has a maximum drain current rating of 100A and a maximum drain-source on-state resistance of 1.87mΩ. It also has a breakdown voltage rating of 21V, making it ideal for applications that require high voltage ratings.

The SIA427ADJ-T1-GE3 has a high voltage rating due to its vertical structure. The vertical structure of the transistor causes the source to be held closer to the channel of the device. This allows the transistor to stand up to much higher voltages than traditional transistors, making it a better choice for many power applications.

The SIA427ADJ-T1-GE3 has an excellent gate-to-drain breakdown voltage of 21V. The high voltage rating not only allows for higher voltage transient protection, but also for better noise immunity for signals that pass through the transistor.

The SIA427ADJ-T1-GE3 also features an independent gate-to-source and gate-to-drain capacitance. The gate-to-drain capacitance is especially beneficial for applications that require circuit noise reduction. The gate-to-source capacitance also improves signal integrity between the gate and source, making it ideal for high frequency applications.

The SIA427ADJ-T1-GE3 has a very low gate charge, which allows for improved switching speeds and better efficiency in power applications. The low gate charge also helps reduce the power consumption of the device.

In addition to its high voltage rating, the SIA427ADJ-T1-GE3 also features a low thermal resistance. This helps it to maintain a low operating temperature even when used in power applications.

The SIA427ADJ-T1-GE3 is a very versatile device that can be used in a variety of different applications. It is suitable for use in automotive, computing, consumer electronics, industrial, and lighting applications. In addition, it can be used for power switching applications such as rectifiers, transistor amplifiers, power supplies, and motor controls.

The SIA427ADJ-T1-GE3 is an efficient device that is used in a variety of power applications. It is designed to withstand high voltages and provide a high level of circuit protection. The high voltage rating and low gate charge make it ideal for high frequency applications, while the low thermal resistance helps it remain cool during operation. The independent gate-to-source and gate-to-drain capacitance help to reduce circuit noise and improve signal integrity. The SIA427ADJ-T1-GE3 is an excellent choice for a variety of different power applications.

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