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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
RTL035N03FRATR- ND	RTL035N03FRATR	ROHM Semiconductor	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 56 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: TUMT6 Package / Case: 6-SMD, Flat Leads	6000 Order	3000+: $0.0944
SSM6J216FELFTR- ND	SSM6J216FE,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 4.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 32 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: ES6 Package / Case: SOT-563, SOT-666	4000 Order	4000+: $0.0956
TSM900N06CPROGT R-ND	TSM900N06CP ROG	Taiwan Semiconductor Corporation	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 90 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Power Dissipation (Max): 25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2500 Order	--
TK380P60YRQTR-N D	TK380P60Y,RQ	Toshiba Semiconductor and Storage	View more Series: DTMOSV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 9.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 4V @ 360A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 300V Power Dissipation (Max): 30W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2000 Order	2000+: $0.355
IPS70R600P7SAKM A1-ND	IPS70R600P7SAKM A1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 3.5V @ 90A Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 400V Power Dissipation (Max): 43W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251 Package / Case: TO-251-3 Stub Leads, IPak	1784 Order	1+: $0.6237 10+: $0.5456 100+: $0.421 500+: $0.3118 1000+: $0.2495
AUIRFR540Z-ND	AUIRFR540Z	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 28.5 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 4V @ 50A Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V Power Dissipation (Max): 91W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2442 Order	--
FDA032N08-ND	FDA032N08	ON Semiconductor	View more Series: PowerTrench Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 15160pF @ 25V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	436 Order	--
IRFP448PBF-ND	IRFP448PBF	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Power Dissipation (Max): 180W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	500 Order	--
FCH043N60-ND	FCH043N60	ON Semiconductor	View more Series: SuperFET II Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 43 mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 12225pF @ 400V Power Dissipation (Max): 592W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	730 Order	--
NTMFS4925NT1GOS TR-ND	NTMFS4925NT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 9.7A (Ta), 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1264pF @ 15V Power Dissipation (Max): 920mW (Ta), 23.2W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	1000 Order	--
RQ1E070RPTR-ND	RQ1E070RPTR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 17 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 10V Power Dissipation (Max): 550mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT8 Package / Case: 8-SMD, Flat Lead	1000 Order	--
IRF7476TRPBFTR- ND	IRF7476TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id: 1.9V @ 250A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 6V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
IPD90N06S4L03AT MA2-ND	IPD90N06S4L03AT MA2	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 2.2V @ 90A Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.5777
NVMFS6B14NWFT1G -ND	NVMFS6B14NWFT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 50V Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	1000 Order	1500+: $0.8683
AONX36372-ND	AONX36372	Alpha & Omega Semiconductor Inc.	View more Part Status: Active	1000 Order	3000+: $0.5683
SPA03N60C3XKSA1 -ND	SPA03N60C3XKSA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 3.9V @ 135A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Power Dissipation (Max): 29.7W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
NVMFS5830NLT3G- ND	NVMFS5830NLT3G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 29A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5880pF @ 25V Power Dissipation (Max): 3.8W (Ta), 158W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	1000 Order	5000+: $0.6519
IPP084N06L3GXKS A1-ND	IPP084N06L3GXKS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.2V @ 34A Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 30V Power Dissipation (Max): 79W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	500+: $0.6201
IRF610LPBF-ND	IRF610LPBF	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Power Dissipation (Max): 3W (Ta), 36W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	--
SPD07N60C3ATMA1 -ND	SPD07N60C3ATMA1	Infineon Technologies	View more Series: * Part Status: Not For New Designs	1000 Order	2500+: $0.6819
IPP60R450E6XKSA 1-ND	IPP60R450E6XKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 450 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 280A Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 100V Power Dissipation (Max): 74W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
IPL65R195C7AUMA 1-ND	IPL65R195C7AUMA 1	Infineon Technologies	View more Series: CoolMOS C7 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4V @ 290A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 400V Power Dissipation (Max): 75W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	1000 Order	--
IPB039N10N3GE81 87ATMA1TR-ND	IPB039N10N3GE81 87ATMA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.5V @ 160A Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8410pF @ 50V Power Dissipation (Max): 214W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, DPak (6 Leads + Tab), TO-263CB	1000 Order	1000+: $1.1023
IPW60R230P6FKSA 1-ND	IPW60R230P6FKSA 1	Infineon Technologies	View more Series: CoolMOS P6 Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 16.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 230 mOhm @ 6.4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 530A Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 100V Power Dissipation (Max): 126W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	1000 Order	1+: $0
IXTA75N10P-ND	IXTA75N10P	IXYS	View more Series: PolarHT Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Power Dissipation (Max): 360W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	50+: $2.0214
IPP65R150CFDAAK SA1-ND	IPP65R150CFDAAK SA1	Infineon Technologies	View more Series: Automotive, AEC-Q101, CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 22.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150 mOhm @ 9.3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 900A Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V Power Dissipation (Max): 195.3W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	500+: $2.0536
IXTU06N120P-ND	IXTU06N120P	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 600mA (Tc) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	75+: $2.217
IXFH20N80P-ND	IXFH20N80P	IXYS	View more Series: HiPerFET, PolarHT Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 520 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 4685pF @ 25V Power Dissipation (Max): 500W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	1000 Order	--
IXFR26N50-ND	IXFR26N50	IXYS	View more Series: HiPerFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 200 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247 Package / Case: ISOPLUS247	1000 Order	30+: $6.7578
IXFT88N30P-ND	IXFT88N30P	IXYS	View more Series: HiPerFET, PolarP2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 40 mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V Power Dissipation (Max): 600W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, DPak (2 Leads + Tab), TO-268AA	1000 Order	--
APT30M85BVRG-ND	APT30M85BVRG	Microsemi Corporation	View more Series: POWER MOS V Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 85 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	1000 Order	60+: $7.1775
IXFH13N90-ND	IXFH13N90	IXYS	View more Series: HiPerFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	1000 Order	30+: $7.774
FDS5351TR-ND	FDS5351	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 6.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 30V Power Dissipation (Max): 5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	10000 Order	--
FDMA910PZTR-ND	FDMA910PZ	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 9.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 2805pF @ 10V Power Dissipation (Max): 2.4W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-VDFN Exposed Pad	27000 Order	--
ZXMP3A16GTR-ND	ZXMP3A16GTA	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.2A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 29.6nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1022pF @ 15V Power Dissipation (Max): 2W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	38000 Order	--
BS107P-ND	BS107P	Diodes Incorporated	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 120mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V Rds On (Max) @ Id, Vgs: 30 Ohm @ 100mA, 5V Vgs (Max): 20V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	30195 Order	--
FQP32N20CFS-ND	FQP32N20C	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 82 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Power Dissipation (Max): 156W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	15195 Order	--
NTR4003NT3GOSTR -ND	NTR4003NT3G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 5V Power Dissipation (Max): 690mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	60000 Order	--
RFD3055LE-ND	RFD3055LE	ON Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 107 mOhm @ 8A, 5V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Power Dissipation (Max): 38W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	2832 Order	--
IXTA3N120-ND	IXTA3N120	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Power Dissipation (Max): 200W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	407 Order	--

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