IXFH13N90

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The IXFH13N90 is an advanced field-effect transistor (FET) engineered for use in extreme conditions, including space and military applications. This type of transistor is exceptionally powerful and enables excellent performance when tasked with increased loads. The IXFH13N90 is a single, high-power Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) capable of withstanding high transient voltages as well as a wide range of temperature extremes. This makes it an ideal choice for applications requiring a rugged and reliable transistors.

The IXFH13N90 is a three-terminal device that consists of a source drain and gate electrode. In the most basic terms, these form the three essential elements of a field effect transistor. The source and drain electrodes form the channels, while the gate electrode operates as a control switch. A voltage is applied to the gate, the amount of voltage, determines the current sourced from the drain.

The IXFH13N90 is capable of supporting significantly higher current compared to other FETs. It is also capable of supporting extremely high voltage, thanks to its high breakdown voltage. Furthermore, its unique structure allows it to operate at extremely high switching speeds, with a turn-on time as low as 10ns.

In addition to its extreme performance capabilities, the IXFH13N90 has a number of advantages, especially in applications where power conservation is a must or in applications where extreme efficiency is required. Its low gate charge means that it requires less power to operate and it can be quickly turned on and off without generating the amount of heat generated by other FETs. It also has a very low thermal resistance, which translates into higher efficiency and higher current carrying capability.

The IXFH13N90 is also very reliable and can be expected to have a lifespan of up to 10 million cycles for commercial applications. When it is employed in extreme temperature or radiation environments, it can be expected to function for many years without issue. Furthermore, the internal architecture of the IXFH13N90 is designed to protect the chip from high-frequency noise, ensuring a clean signal and consistent performance across a wide range of operational voltage and current levels.

The IXFH13N90 is a versatile and powerful device, capable of handling intense loads, extreme temperatures and high transient voltages. It has an exceptionally high current capability, along with low gate charge, low thermal resistance and improved noise protection. It is designed to operate reliably in extreme environments and can be expected to have a long lifespan even when subjected to drastic variations in temperature and in current loads. Thanks to its dependable performance, the IXFH13N90 is an excellent choice for a range of applications, including space and military.

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