NVMFS5830NLT3G Allicdata Electronics
Allicdata Part #:

NVMFS5830NLT3G-ND

Manufacturer Part#:

NVMFS5830NLT3G

Price: $ 0.72
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 40V 185A SO8FL
More Detail: N-Channel 40V 29A (Ta) 3.8W (Ta), 158W (Tc) Surfac...
DataSheet: NVMFS5830NLT3G datasheetNVMFS5830NLT3G Datasheet/PDF
Quantity: 1000
5000 +: $ 0.65195
Stock 1000Can Ship Immediately
$ 0.72
Specifications
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5880pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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NVMFS5830NLT3G is a type of single MOSFET that is designed to function in an array of applications. It features an advanced trench technology and a wide range of operating temperature range (from -55 to +150 degree Celsius).

NVMFS5830NLT3G has three terminals namely the Gate, Drain and Source terminals. The Gate terminal is where the controlling voltage is applied in order to vary the Drain-Source resistance. The Drain and Source terminals act as the on/off switch.

The working principle of the NVMFS5830NLT3G is based on the MOS capacitor effect. When the Gate terminal is left open (not connected to anything), then the Drain-Source resistance is very high. On the other hand, when the Gate terminal is applied with a voltage, then the Drain-Source resistance is reduced to a very low value. This working principle is one of the reasons why the NVMFS5830NLT3G is used in many applications where the control of Drain-Source resistance is desired.

The NVMFS5830NLT3G application field covers both power and electronics applications as well as digital and analog circuitry applications. In power applications, the NVMFS5830NLT3G is used as a switch that can be used to control the power flow to the load. It acts as a switch by changing its on-state resistance when the Gate voltage is varied. In electronics applications, it is used as a voltage amplifier and voltage regulator. In digital circuits, it is used as a signal amplifier or a logic gate. Finally, in analog circuitry, it can be used as a voltage-controlled current source.

The main advantages of NVMFS5830NLT3G are its low on-state resistance, fast switching time and its wide range of operating temperature range. Its fast switching time and low on-state resistance make it suitable for many high-speed applications. These advantages make it suitable for use in a variety of applications that include high-speed switching, voltage regulation, signal amplification and so on.

In conclusion, NVMFS5830NLT3G is a type of single MOSFET that can be used for a variety of applications based on its main advantages. The main advantages are its low on-state resistance, wide operating temperature range and fast switching time. It can be used in power applications, electronics applications, digital circuitry and analog circuitry.

The specific data is subject to PDF, and the above content is for reference

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