IPD90N06S4L03ATMA2

Vgs(th) (Max) @ Id:	2.2V @ 90µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3-11
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	150W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	13000pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	170nC @ 10V
Series:	Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs:	3.5 mOhm @ 90A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	90A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IPD90N06S4L03ATMA2 is an advanced insulated-gate bipolar transistor (IGBT) designed for high-frequency, high-speed switching and rectification applications in the electronic equipment industry. It is a single device with four terminals, and its active regions combine the properties of two transistors, making it both a fast switching device and a rectifier.In terms of application field, IPD90N06S4L03ATMA2 can be used in a wide range of industries. It is particularly suitable for applications in power electronics, such as motor control, high-frequency power supplies, UPS systems, generators, and renewable energy controllers. In addition, it is also suitable for current and voltage-regulated systems, as well as lighting applications.With regard to its working principle, IPD90N06S4L03ATMA2 is based on the principle of bipolar transistor action. Instead of a conventional transistor, the IPD90N06S4L03ATMA2 has two insulated base regions, one connected to the drain, and another to the source. The current flow is controlled by modifying the voltage applied across the insulated base regions. When the voltage is above the threshold voltage, current will flow from the drain to the source. On the other hand, when the voltage is below the threshold voltage, the current will be blocked and no current will flow.Additionally, IPD90N06S4L03ATMA2 has the characteristic of fast turn-on and turn-off, which makes it ideal in high-frequency and high-speed switching and rectification applications. Furthermore, it has a low gate charge, meaning that it can open and close quickly with minimal losses. Finally, its low on-resistance and minimal wiring inductance make it suitable for high-current applications and other applications which require minimal losses.IPD90N06S4L03ATMA2 is an innovative device that combines the properties of two transistors and makes it both a fast switching device and a rectifier. In terms of application field, it is suitable for a wide range of industries, such as power electronics, current and voltage regulated systems, and lighting applications. Furthermore, its fast turn-on and turn-off, low gate charge, low on-resistance, and minimal wiring inductance make it suitable for high-frequency and high-speed switching, rectification, and other applications.

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