IXFH20N80P

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The IXFH20N80P is an enhanced mode Field-Effect Transistor (FET) designed to operate with low gate-source voltage and total gate charge. This device suits many applications including switching, regulating, amplifier and high voltage rectification. It excels with the amount of power it can support from medium voltage with low gate drive. To provide superior performance, IXFH20N80P treasured with the latest optocouplers and isolation technologies, making it one of the most reliable Field-Effect Transistor of its kind.

IXFH20N80P has a depletion mode MOSFET construction type and its technology is unipolar. It has a drain to source breakdown of 800V, Drain current of 20A, Drain to source voltage of 800V, Power dissipation at 25°C of 153W and Thermal resistance junction to case of 140°C/W. It also features an avalanche rating of 12 uAs, transient energy of 51 mJ, gate oxide voltage at 1A of 118V and avalanche energy of 22.9 mJ.

IXFH20N80P works with a principle of high voltage, low gate charge and low total gate charge option. It can operate efficiently with low gate drive voltage, even when the gate drive power exceeds the Supply voltages. IXFH20N80P gives excellent reliability by using highest quality substrates, insulators and technologies that have passed industry tests. When operating IXFH20N80P, temperature should be maintained at 25°C or below and the Application Voltage should be between 10V - 800V.

IXFH20N80P is suitable for a variety of applications due to its high voltage operations with low gate charge. It can be used as a switching device to control the power dissipation from low to medium voltage applications. It can be used as a regulator for providing precise control over voltage for an isolated regulation loop. It can be used for amplifier operation due to its high current rating and its low gate charge. As IXFH20N80P is self protected against avalanche, it is well suited for high voltage rectification.

The IXFH20N80P Field-Effect Transistor is the perfect choice for a wide range of applications where low gate drive power, long life operation and excellent reliability is required. It offers enhanced performance and reliability of the design, making it one of the best Field-Effect Transistor available.

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