| Allicdata Part #: | IRF610LPBF-ND |
| Manufacturer Part#: |
IRF610LPBF |
| Price: | $ 0.65 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 200V 3.3A TO-262 |
| More Detail: | N-Channel 200V 3.3A (Tc) 3W (Ta), 36W (Tc) Through... |
| DataSheet: | IRF610LPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.65000 |
| 10 +: | $ 0.63050 |
| 100 +: | $ 0.61750 |
| 1000 +: | $ 0.60450 |
| 10000 +: | $ 0.58500 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | I2PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3W (Ta), 36W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 140pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.3A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IRF610LPBF is a type of advanced power MOSFET that is specifically designed for consumer, automotive, and industrial applications. This MOSFET offers excellent breakdown voltage, low on-state resistance and fast switching speeds. It is commonly used in power supplies and in other applications that demand efficient, low-voltage power conversion. Let’s take a look at its application field and working principle.
Application Field
IRF610LPBF is a P-channel enhancement mode field-effect transistor (MOSFET) which is commonly used in power supplies, switchmode power supplies, voltage regulators and other switched-mode power conversion circuitry. It allows for efficient, low-voltage power conversion with fast switching speeds and outstanding thermal stability. This MOSFET is an ideal for automotive, consumer, and industrial applications that need an efficient way of managing power management.
In automotive applications, this MOSFET is a great fit for alternator control, invertors, and high-side switches. In consumer applications, it is typically used in audio systems, battery chargers, DC-DC converters, portable devices, and switching regulators. Furthermore, the IRF610LPBF can be used for very low throughput low-voltage power conversion in industrial applications such as HVAC, robotic control, and power tool applications.
Working Principle
At the most basic level, the IRF610LPBF works in the same way as any other MOSFET. This MOSFET has three terminals – the gate, source and drain, which control the flow of electrons between them and allow the user to switch or regulate electrical power or signal. The gate is the control element which acts as a switch that allows or blocks electrons between the source and the drain by applying a voltage. When the gate voltage is applied, the MOSFET is in the “on” state and electrons flow from the source to the drain. When the gate voltage is removed, the MOSFET goes into the “off” state and electrons stop flowing.
The IRF610LPBF is designed to maximize total power dissipation and driving efficiency, and offers excellent breakdown voltage, low on-state resistance, and other features that help to make it a more efficient MOSFET for power conversion. It also offers a wide range of operating temperature from -55℃ to 125℃, making it suitable for many different applications.
Conclusion
In summary, the IRF610LPBF offers advantages over traditional MOSFETs in applications that demand fast switching speeds and efficient power conversion. It is an ideal choice for automotive, consumer and industrial applications that require operating efficiency, thermal stability, low-voltage power conversion, and fast switching speeds.
The specific data is subject to PDF, and the above content is for reference
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IRF610LPBF Datasheet/PDF