Allicdata Part #: | FDMA910PZTR-ND |
Manufacturer Part#: |
FDMA910PZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 9.4A MICROFET |
More Detail: | P-Channel 20V 9.4A (Ta) 2.4W (Ta) Surface Mount 6-... |
DataSheet: | FDMA910PZ Datasheet/PDF |
Quantity: | 27000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 9.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 9.4A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 4.5V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 2805pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 2.4W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-MicroFET (2x2) |
Package / Case: | 6-VDFN Exposed Pad |
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The FDMA910PZ is a Field Effect Transistor (FET) used in various applications. It belongs to a family known as the Single MOSFETs or (SMOS). This type of FET is best suited for amplifying or switching applications where the input signal is low-power and the output is high-power. It is preferred for use in linear applications due to its excellent voltage regulation and low noise output. Commonly used in Automotive, Digital Broadcasting, Industrial and Telecom applications the FDMA910PZ is the workhorse of many circuits.
The FDMA910PZ is a depletion-mode FET which means that it operates in a “turned-on” mode by default. When a positive voltage is applied to its Gate terminal, the device is “turned-off” and the output current is reduced. The Gate input features a very low input capacitance which is advantageous for low frequency response when used in linear mode applications. It can operate with load currents up to 100mA.
The FDMA910PZ is an N-channel MOSFET featuring a maximum Drain-Source Voltage of 60 Volts and a Gate-Source Voltage of 15 Volts. It has a maximum Drain current of 100mA, a maximum Drain-Source On-State resistance of 0.0076 Ohms and a maximum Gate Threshold Voltage of -2.4V. This FET has very good switching speeds producing a fast turn-on and turn-off time.
The FDMA910PZ is constructed with a metal-oxide semiconductor (MOS) structure. It has four metal contacts on the top and bottom of the FET. These contacts control the current flow and form a potential junction between the Gate and Source of the FET. The metal-oxide structure forms an insulating layer which helps protect the transistor and can withstand a higher voltage than other transistors, such as bipolar junction transistors.
The FDMA910PZ has an operating temperature range of -55°C to 150°C and is a popular choice for automotive and industrial applications, due to its very low temperature coefficient. This FET can also be used in analog and digital applications, as it has a very low noise output.
When applying the FDMA910PZ in linear operation mode, the Gate terminal needs to be connected to the input voltage source in order to regulate the Drain-Source current flow. In switching mode applications the Gate is switched between high and low, a positive voltage on the Gate input switches the device “on” and allows current flow, while a negative voltage will switch the device “off” by blocking the current flow.
The FDMA910PZ is a reliable and efficient device that is used extensively in many applications. Its wide operating range and excellent switching speed make it perfectly suited for a variety of applications. It performs excellently in linear as well as switching applications and its excellent voltage regulation, low noise output, and wide temperature range make it the ideal choice for any circuit design.
The specific data is subject to PDF, and the above content is for reference
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