IPL65R195C7AUMA1

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The IPL65R195C7AUMA1 is a Field-Effect Transistor (FET) designed for use as a low-side switch or a logic level converter in SMPS and power management applications. This device is a low-voltage and low-power drain-to-source switch, comprising a single high-density p-channel vertical DMOS (intrinsic Shoot-through Protection) FET housed in a small package. It has a low profile, making it suitable for space-constrained applications.

The IPL65R195C7AUMA1 is ideal for use in gate drivers, low-side switching circuits, DC-DC and AC-DC converters, and in industrial, medical, and process control. It is also suitable for automotive applications.

Working Principle

The IPL65R195C7AUMA1 switch is constructed of a vertical p-channel DMOS FET. This DMOS is a three-terminal, insulated gate transistor that uses a voltage instead of a current to control current flow. It is activated by applying a voltage between the gate and source terminal, which reduces or eliminates the resistance from the drain to the source. The switch is controlled by applying a voltage to the gate terminal, which in turn controls the passage of current through the switch. When the switch is in the off state, no current will flow. When the switch is turned on, current will flow from the drain to the source.

The IPL65R195C7AUMA1 features over-current protection and over-temperature protection. The integrated protection features work to protect against any damage that could be caused by a surge or excessive temperature. The device also has a low on-resistance throughout its operating temperature range.

Applications

The IPL65R195C7AUMA1 is an ideal device for power management and SMPS applications.

In power management applications, the low on-resistance and low power dissipation make the device suitable for use in gate drivers and switching circuits. The low-power dissipation allows for improved efficiency and longer battery life. The fast switching time of the device also makes it ideal for use in DC-DC and AC-DC converters.

In SMPS applications, the device can be used for low-side switching within converters and power supplies. Its low on-resistance is ideal for low voltage and low power applications. The device also features a high peak current capability allowing for fast switching times, improving system efficiency.

The IPL65R195C7AUMA1 is also suitable for use in industrial, medical, and process control applications. Its fast switching speed and small package size make it ideal for use in space-constrained applications. The device also features a low on-resistance, making it ideal for low voltage, low power applications.

The device is also rated for automotive applications. The device is AEC-Q101 qualified and rated for temperatures up to 125°C, making it suitable for use in automotive applications.

Conclusion

The IPL65R195C7AUMA1 is a single p-channel vertical DMOS FET designed for use as a low-side switch or logic level converter in SMPS and power management applications. The device features a low on-resistance, fast switching speed and high peak current capability. It is ideal for use in gate drivers, low-side switching circuits, DC-DC and AC-DC converters, and in industrial, medical and process control applications. It is also rated for use in automotive applications.

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