Allicdata Part #: | IXFT88N30P-ND |
Manufacturer Part#: |
IXFT88N30P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 300V 88A TO268 |
More Detail: | N-Channel 300V 88A (Tc) 600W (Tc) Surface Mount TO... |
DataSheet: | IXFT88N30P Datasheet/PDF |
Quantity: | 1000 |
Series: | HiPerFET™, PolarP2™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 300V |
Current - Continuous Drain (Id) @ 25°C: | 88A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 44A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6300pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 600W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXFT88N30P Application Field and Working Principle
The IXFT88N30P is a N–channel Power MOSFET that is commonly used in a variety of applications. It can be used in electronic devices where a large current and/or voltage is needed. This type of MOSFET is also commonly used in power supplies and other power circuits.The devices have a number of features that make them suitable for use in a wide range of applications. The characteristics that make the IXFT88N30P a great choice for use in a variety of applications include their high current and voltage handling capability, their high switching frequency and their low on resistance.The basic premise of the design of the IXFT88N30P is to reduce the power it consumes. The MOSFET is designed to reduce the input capacitance required for switching, resulting in a lower gate charge. This reduces the input power needed, therefore reducing overall power consumption.The IXFT88N30P is a double-gate MOSFET. This means that it has two metal–oxide–semiconductor (MOS) gates. The gates act as a resistor and provide isolated inputs, which offers better control over the switching process and increased protection against stray radiation or external noise.The metal–oxide–semiconductor field-effect transistor (MOSFET) is the core technology of the IXFT88N30P. The MOSFET works by creating electric fields that control the flow of current. It uses a gate terminal to control the electric field, allowing or disallowing current flow through the device.MOSFETs have a number of advantages over bipolar-junction transistors (BJTs), including the simple construction, faster switching speeds, lower power consumption, and higher input impedance. All of these properties make the IXFT88N30P a good choice for a wide range of applications.In operation, the IXFT88N30P is first turned on by applying a positive gate voltage. This positive voltage causes the gate to move towards the drain and current then flows from the source to the drain. As the voltage applied to the gate decreases, the current drops and the MOSFET is turned off.The IXFT88N30P is a great choice for many applications, including power supplies, switching power amplifiers, motor drives, and any application that requires a high current and/or voltage. Its low on-resistance, low input capacitance, and high switching speed make it an ideal choice for a variety of applications.Overall, the IXFT88N30P is a great choice for many applications that require a large current and/or voltage. It has a number of features that make it a useful and versatile device, including its low on-resistance, low input capacitance, and high switching speed. Its double-gate structure gives it the added benefit of providing improved control and protection against external radiation or noise. The IXFT88N30P is a great choice for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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IXFT14N100 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1000V 14A TO-... |
IXFT30N50Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 30A TO-2... |
IXFT32N50 | IXYS | -- | 1000 | MOSFET N-CH 500V 32A TO-2... |
IXFT74N20 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 200V 74A TO-2... |
IXFT80N10Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 100V 80A TO-2... |
IXFT80N15Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 150V 80A TO-2... |
IXFT80N20Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 200V 80A TO-2... |
IXFT12N100Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1000V 12A TO2... |
IXFT15N100Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1000V 15A TO-... |
IXFT16N90Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 900V 16A TO-2... |
IXFT17N80Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 800V 17A TO-2... |
IXFT20N60Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 600V 20A TO-2... |
IXFT20N80Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 800V 20A TO-2... |
IXFT21N50Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 21A TO-2... |
IXFT26N50Q | IXYS | -- | 1000 | MOSFET N-CH 500V 26A TO-2... |
IXFT26N60Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 600V 26A TO-2... |
IXFT60N25Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 250V 60A TO-2... |
IXFT74N20Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH TO268 |
IXFT1874 TR | IXYS | 0.0 $ | 1000 | MOSFET N-CH TO268 |
IXFT26N50Q TR | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 26A TO26... |
IXFT40N30Q TR | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V 40A TO26... |
IXFT52N30Q TRL | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V 52A TO26... |
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IXFT50N30Q3 | IXYS | 9.3 $ | 21 | MOSFET N-CH 300V 50A TO-2... |
IXFT30N50Q3 | IXYS | 9.3 $ | 35 | MOSFET N-CH 500V 30A TO-2... |
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