IXFT88N30P Allicdata Electronics
Allicdata Part #:

IXFT88N30P-ND

Manufacturer Part#:

IXFT88N30P

Price: $ 7.51
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 300V 88A TO268
More Detail: N-Channel 300V 88A (Tc) 600W (Tc) Surface Mount TO...
DataSheet: IXFT88N30P datasheetIXFT88N30P Datasheet/PDF
Quantity: 1000
1 +: $ 7.51000
10 +: $ 7.28470
100 +: $ 7.13450
1000 +: $ 6.98430
10000 +: $ 6.75900
Stock 1000Can Ship Immediately
$ 7.51
Specifications
Vgs(th) (Max) @ Id: 5V @ 4mA
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 600W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Series: HiPerFET™, PolarP2™
Rds On (Max) @ Id, Vgs: 40 mOhm @ 44A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXFT88N30P Application Field and Working Principle

The IXFT88N30P is a N–channel Power MOSFET that is commonly used in a variety of applications. It can be used in electronic devices where a large current and/or voltage is needed. This type of MOSFET is also commonly used in power supplies and other power circuits.The devices have a number of features that make them suitable for use in a wide range of applications. The characteristics that make the IXFT88N30P a great choice for use in a variety of applications include their high current and voltage handling capability, their high switching frequency and their low on resistance.The basic premise of the design of the IXFT88N30P is to reduce the power it consumes. The MOSFET is designed to reduce the input capacitance required for switching, resulting in a lower gate charge. This reduces the input power needed, therefore reducing overall power consumption.The IXFT88N30P is a double-gate MOSFET. This means that it has two metal–oxide–semiconductor (MOS) gates. The gates act as a resistor and provide isolated inputs, which offers better control over the switching process and increased protection against stray radiation or external noise.The metal–oxide–semiconductor field-effect transistor (MOSFET) is the core technology of the IXFT88N30P. The MOSFET works by creating electric fields that control the flow of current. It uses a gate terminal to control the electric field, allowing or disallowing current flow through the device.MOSFETs have a number of advantages over bipolar-junction transistors (BJTs), including the simple construction, faster switching speeds, lower power consumption, and higher input impedance. All of these properties make the IXFT88N30P a good choice for a wide range of applications.In operation, the IXFT88N30P is first turned on by applying a positive gate voltage. This positive voltage causes the gate to move towards the drain and current then flows from the source to the drain. As the voltage applied to the gate decreases, the current drops and the MOSFET is turned off.The IXFT88N30P is a great choice for many applications, including power supplies, switching power amplifiers, motor drives, and any application that requires a high current and/or voltage. Its low on-resistance, low input capacitance, and high switching speed make it an ideal choice for a variety of applications.Overall, the IXFT88N30P is a great choice for many applications that require a large current and/or voltage. It has a number of features that make it a useful and versatile device, including its low on-resistance, low input capacitance, and high switching speed. Its double-gate structure gives it the added benefit of providing improved control and protection against external radiation or noise. The IXFT88N30P is a great choice for use in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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