SSM6J216FE,LF Discrete Semiconductor Products

Series:	U-MOSVI
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	12V
Current - Continuous Drain (Id) @ 25°C:	4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Rds On (Max) @ Id, Vgs:	32 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	12.7nC @ 4.5V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	1040pF @ 12V
FET Feature:	--
Power Dissipation (Max):	700mW (Ta)
Operating Temperature:	150°C
Mounting Type:	Surface Mount
Supplier Device Package:	ES6
Package / Case:	SOT-563, SOT-666

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The SSM6J216FE,LF belongs to the class of transistors, also called Field Effect Transistor (FET). Within this class of transistors there are two subclasses, MOSFETs and Single. The SSM6J216FE, LF is in the subclass of MOSFETs, which is short for metal oxide semiconductor field-effect transistor. The SSM6J216FE, LF is a single transistor as it contains a single semiconductor chip. A transistor is a small electronic device used to control or amplify electrical signals. These devices work by allowing a small amount of current to flow in one direction, which then, in turn, controls the large amount of current flowing in the opposite direction. In the case of the SSM6J216FE, LF the MOSFET design acts like a switch. When a small amount of current is applied to the gate (G) of the device, it allows the large amount of current to flow between the source (S) and the drain (D).The SSM6J216FE, LF is designed for use in general purpose applications as it has high power capacity with low on-state resistance, making it suitable for use in motor control, high side drives, and powermanagement applications. In order to use the device effectively, it is important to understand the working principle of MOSFETs and the SSM6J216FE, LF. MOSFETs are voltage-controlled devices with three terminals, gate, drain and source. A voltage applied to the gate of the MOSFET will control the flow of current from the source to the drain, as illustrated in Figure 1 below. Figure 1: Working principle of the SSM6J216FE, LF MOSFETBasically, the MOSFET acts as a voltage-controlled switch, as depicted in Figure 1. When the gate (G) is not driven with a voltage, the channel between the source and drain is “pinched-off” and the current flow is blocked. However, when a voltage is applied the gate, the channel opens allowing current to flow. The higher the voltage applied at the gate, the greater the amount of current that can flow through the channel. The SSM6J216FE, LF is capable of delivering a slew rate of 4V/usec, with a breakdown voltage of 20V for the drain-source voltage (VDS). It has a maximum current rating of 220mA, a maximum power dissipation of 1.3W, and an operating temperature range from -55°C to +150°C. These characteristics make the SSM6J216FE, LF suitable for use in a variety of applications. For example, the SSM6J216FE, LF can be used in motor control applications where pulse width modulation (PWM) is used to control the speed and torque of motors. PWM involves applying a series of pulses with different durations to the gate of the transistor to control the speed and torque of the motor. The SSM6J216FE, LF can also be used in high-side drive applications, as well as power management applications in which the voltage applied to the gate of the SSM6J216FE, LF is used to control the power being supplied to a load. In summary, the SSM6J216FE, LF is a single MOSFET transistor that can be used in general purpose applications for motor control, high side drive, and power management. The device is capable of delivering a slew rate of 4V/usec, with a breakdown voltage of 20V and a maximum current rating of 220mA. By understanding the working principle of MOSFETs and the characteristics of the SSM6J216FE, LF, it is possible to use this device in a wide range of applications.

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