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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
SUP57N20-33-E3- ND	SUP57N20-33-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 57A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 33 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Power Dissipation (Max): 3.75W (Ta), 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
SUP53P06-20-E3- ND	SUP53P06-20-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 9.2A (Ta), 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	4990 Order	--
SUP53P06-20-GE3 -ND	SUP53P06-20-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 9.2A (Ta), 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
SPD30N03S2L20IN TR-ND	SPD30N03S2L-20	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 2V @ 23A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Power Dissipation (Max): 60W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
ATP201-V-TL-H-N D	ATP201-V-TL-H	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	1000 Order	--
ATP101-V-TL-H-N D	ATP101-V-TL-H	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	1000 Order	--
IPC50N04S5L5R5A TMA1TR-ND	IPC50N04S5L5R5A TMA1	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 13A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1209pF @ 25V Power Dissipation (Max): 42W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-33 Package / Case: 8-PowerTDFN	1000 Order	5000+: $0.2074
FDMC8588DCTR-ND	FDMC8588DC	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 13V Power Dissipation (Max): 3W (Ta), 41W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Dual Cool 33 Package / Case: 8-PowerTDFN	1000 Order	--
FDMC2514SDCTR-N D	FDMC2514SDC	ON Semiconductor	View more Series: Dual Cool, PowerTrench, SyncFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 24A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 22.5A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2705pF @ 13V Power Dissipation (Max): 3W (Ta), 60W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Dual Cool 33 Package / Case: 8-PowerTDFN	1000 Order	--
FDMC2512SDCTR-N D	FDMC2512SDC	ON Semiconductor	View more Series: Dual Cool, PowerTrench, SyncFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 32A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2 mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4410pF @ 13V Power Dissipation (Max): 3W (Ta), 66W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Dual Cool 33 Package / Case: 8-PowerTDFN	1000 Order	3000+: $0.8803
FDMC7660DCTR-ND	FDMC7660DC	ON Semiconductor	View more Series: Dual Cool, PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 30A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5170pF @ 15V Power Dissipation (Max): 3W (Ta), 78W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Dual Cool 33 Package / Case: 8-PowerTDFN	1000 Order	--
FDMC3020DCTR-ND	FDMC3020DC	ON Semiconductor	View more Series: Dual Cool, PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 17A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.25 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1385pF @ 15V Power Dissipation (Max): 3W (Ta), 50W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Dual Cool 33 Package / Case: 8-PowerTDFN	1000 Order	--
FDMC86520DCTR-N D	FDMC86520DC	ON Semiconductor	View more Series: Dual Cool, PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 17A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2790pF @ 30V Power Dissipation (Max): 3W (Ta), 73W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Dual Cool 33 Package / Case: 8-PowerTDFN	1000 Order	--
FDMC8321LDCTR-N D	FDMC8321LDC	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 27A (Ta), 108A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3965pF @ 20V Power Dissipation (Max): 2.9W (Ta), 56W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Dual Cool 33 Package / Case: 8-PowerTDFN	1000 Order	--
FDZ4670TR-ND	FDZ4670	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 15V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 20-FLFBGA (3.5x4.0) Package / Case: 20-FLFBGA (30 pos)	1000 Order	1+: $0
FDZ4670STR-ND	FDZ4670S	ON Semiconductor	View more Series: PowerTrench, SyncFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3845pF @ 15V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 20-FLFBGA (3.5x4.0) Package / Case: 20-FLFBGA (30 pos)	1000 Order	1+: $0
BUK9MGP-55PTS,5 18-ND	BUK9MGP-55PTS,5 18	Nexperia USA Inc.	View more Series: TrenchPLUS Part Status: Last Time Buy FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 16.9A (Tc), 9.16A (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 10A, 10V, 22.6 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 5V, 23nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5178pF @ 25V, 2315pF @ 25V Power - Max: 5.2W (Tc), 3.9W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SO	1000 Order	1+: $0
DMPH6023SK3Q-13 -ND	DMPH6023SK3Q-13	Diodes Incorporated	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 33 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 53.1nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2569pF @ 30V Power Dissipation (Max): 3.2W Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.3651
SI2314EDS-T1-E3 TR-ND	SI2314EDS-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3.77A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 33 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Vgs (Max): 12V Power Dissipation (Max): 750mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	39000 Order	--
IPI47N10S33AKSA 1-ND	IPI47N10S33AKSA 1	Infineon Technologies	View more Series: SIPMOS Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 33 mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Power Dissipation (Max): 175W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	500+: $0.8289
SI1424EDH-T1-GE 3TR-ND	SI1424EDH-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Rds On (Max) @ Id, Vgs: 33 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Vgs (Max): 8V Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	6000 Order	--
NTMS5P02R2GOSTR -ND	NTMS5P02R2G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3.95A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 33 mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 16V Power Dissipation (Max): 790mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
IXFK102N30P-ND	IXFK102N30P	IXYS	View more Series: PolarHT HiPerFET Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25C: 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 33 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V Power Dissipation (Max): 700W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	1000 Order	--
SQJ479EP-T1_GE3 TR-ND	SQJ479EP-T1_GE3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 33 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Power Dissipation (Max): 68W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	1000 Order	--
1727-1371-2-ND	PMPB29XNE,115	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 33 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	1000 Order	3000+: $0.105
SIS892ADN-T1-GE 3TR-ND	SIS892ADN-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 33 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 50V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK 1212-8 Package / Case: PowerPAK 1212-8	48000 Order	--
FDMS5362L-F085T R-ND	FDMS5362L-F085	ON Semiconductor	View more Series: Automotive, AEC-Q101, PowerTrench Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 17.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 33 mOhm @ 17.6A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 878pF @ 25V Power Dissipation (Max): 41.7W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	1000 Order	3000+: $0.2355
IXFN110N85X-ND	IXFN110N85X	IXYS	View more Series: HiPerFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 33 mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 425nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 17000pF @ 25V Power Dissipation (Max): 1170W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	1000 Order	1+: $33.7869 10+: $31.5977 100+: $27.397
TSM2314CXRFGTR- ND	TSM2314CX RFG	Taiwan Semiconductor Corporation	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 33 mOhm @ 4.9A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Power Dissipation (Max): 1.25W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	9000 Order	3000+: $0.0897
IPB47N10S33ATMA 1TR-ND	IPB47N10S33ATMA 1	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 33 mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Power Dissipation (Max): 175W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $0.6868
TPH3300CNHL1QTR -ND	TPH3300CNH,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 33 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 300A Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 75V Power Dissipation (Max): 1.6W (Ta), 57W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	5000+: $0.45
NTGS3136PT1GOST R-ND	NTGS3136PT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 33 mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1901pF @ 10V Power Dissipation (Max): 700mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	1000 Order	--
IXTK102N30P-ND	IXTK102N30P	IXYS	View more Series: PolarHT Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25C: 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 33 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 500A Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V Power Dissipation (Max): 700W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	1000 Order	25+: $7.248
SI7454DDP-T1-GE 3TR-ND	SI7454DDP-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 33 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 50V Power Dissipation (Max): 4.1W (Ta), 29.7W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	9000 Order	--
SPI47N10-ND	SPI47N10	Infineon Technologies	View more Series: SIPMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 33 mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Power Dissipation (Max): 175W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
TPCA8105(TE12L, Q,M-ND	TPCA8105(TE12L, Q,M	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 33 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 200A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V Power Dissipation (Max): 1.6W (Ta), 20W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
IRFB4332PBF-ND	IRFB4332PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 33 mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 5860pF @ 25V Power Dissipation (Max): 390W (Tc) Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	6782 Order	--
IXTX90N25L2-ND	IXTX90N25L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 33 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Power Dissipation (Max): 960W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247-3 Package / Case: TO-247-3	240 Order	1+: $18.4779 30+: $15.7036 120+: $14.595
SI2372DS-T1-GE3 TR-ND	SI2372DS-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 4A (Ta), 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 33 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 288pF @ 15V Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	90000 Order	3000+: $0.0687
IXTK80N25-ND	IXTK80N25	IXYS	View more Series: MegaMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 33 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Power Dissipation (Max): 540W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	1000 Order	--

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