FDMC2514SDC Allicdata Electronics
Allicdata Part #:

FDMC2514SDCTR-ND

Manufacturer Part#:

FDMC2514SDC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 25V 40A POWER33
More Detail: N-Channel 25V 24A (Ta), 40A (Tc) 3W (Ta), 60W (Tc)...
DataSheet: FDMC2514SDC datasheetFDMC2514SDC Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 1mA
Package / Case: 8-PowerTDFN
Supplier Device Package: Dual Cool ™ 33
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2705pF @ 13V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Series: Dual Cool™, PowerTrench®, SyncFET™
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 22.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDMC2514SDC is a N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is commonly used in automation, industrial, and consumer electronics applications. In terms of its power rating, it can handle up to 20 watts of power in 4-Pin Through-Hole packages.

A MOSFET is an insulated gate field-effect transistor (IGFET), which is a type of field-effect transistor (FET) that utilizes an insulated gate in order to control the flow of current within a circuit. Due to its insulated gate, a MOSFET has a low input impedance and a high gate-source leakage current. Additionally, the insulated gate means that the device does not require the presence of a voltage in order to operate, which eliminates the need for a separate power source.

The FDMC2514SDC is a single N-Channel MOSFET, which means it is composed of a single, unipolar transistor and has an internal P-Channel and N-Channel that are in parallel with each other. The transistor MOSFET is ideal for applications that require a high-power input/output control, such as industrial automation, instrumentation and motor control.

The FDMC2514SDC offers a number of features that make it well-suited for a variety of applications. The power rating of 20 watts is sufficient for many applications, such as motor control and power switching or power supply regulation. Additionally, the device features a low Tom of 27V and a high DSice of 140V, making it suitable for both low-voltage and medium-voltage applications. It also has a high pulse drain current of 1.25A and an on-resistance of 35Ω, which help to ensure that the device will accurately switch and control the desired current.

The FDMC2514SDC MOSFET also offers excellent protection features that can help to reduce the chances of a component failure due to over-voltage or over-current. It features a variety of protection features, such as ESD protection, diode protection, and over-temperature protection. Additionally, the device has a very low level of on-resistance (RDS(on)), which ensures that the device will be able to accurately switch and control the desired current.

In order for a MOSFET to work properly, the application must be configured correctly. The device must be supplied with the appropriate gate voltage and source resistor to ensure that the source will provide sufficient input/output control. Additionally, the source will need to be matched to the size of the gate, as the gate voltage can affect the device\'s switching time and ability to accurately switch current. The source must also be able to handle the maximum power that is going to be drawn by the device.

Finally, it is important to keep the drain current and drain-source voltage within the device\'s rated limits to ensure that the device will function properly. As with any electronic component, the FDMC2514SDC should be handled with care in order to prevent damage and to ensure that the device is able to perform properly.

The FDMC2514SDC is a single N-Channel MOSFET that is commonly used in automation, industrial, and consumer electronics applications. The device offers a wide range of features, such as a high power rating, low Tom, high DSice, high pulse drain current, and low on-resistance, making it an ideal choice for a variety of applications. Additionally, the device features a variety of protection features, such as ESD protection, diode protection, and over-temperature protection. In order to ensure that the device is able to function properly, the application must be configured correctly and the device must be supplied with the appropriate gate voltage and source resistor.

The specific data is subject to PDF, and the above content is for reference

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