FDMC86520DC Allicdata Electronics
Allicdata Part #:

FDMC86520DCTR-ND

Manufacturer Part#:

FDMC86520DC

Price: $ 0.74
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N CH 60V 17A POWER33
More Detail: N-Channel 60V 17A (Ta), 40A (Tc) 3W (Ta), 73W (Tc)...
DataSheet: FDMC86520DC datasheetFDMC86520DC Datasheet/PDF
Quantity: 1000
1 +: $ 0.74000
10 +: $ 0.71780
100 +: $ 0.70300
1000 +: $ 0.68820
10000 +: $ 0.66600
Stock 1000Can Ship Immediately
$ 0.74
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: Dual Cool ™ 33
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 73W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2790pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Series: Dual Cool™, PowerTrench®
Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDMC86520DC is a single enhancement mode Field Effect Transistor (FET) with N-Channel MOSFET technology. The device is a 30V, 175mA, 5.8W low gate voltage FET that can be used to provide high-power density for portable device applications. It is designed to provide a smaller, more power efficient alternative to traditional MOSFET devices and can be used in various applications including switching, thermal management, lighting, power management and control.

The FDMC86520DC is ideal for applications that require high switching speeds and low on-state resistance. It has a maximum operating temperature range of -50°C to 150°C and is RoHS compliant. With this device, manufacturers are able to reduce the space required for power management and control circuitry while improving the system performance. In addition, the FDMC86520DC exhibits excellent reliability and high breakdown voltage resulting in improved circuit stability.

The FDMC86520DC is available in a TO-206AA (SOT-223) package that is ideal for applications requiring small size and low cost. The device has an integrated ESD protection circuit which improves its durability and reduces the risk of device failure due to electrostatic discharge. The device also has on-board thermal sensing, enabling protection features in the event of thermal overload.

The FDMC86520DC works on the principle of current conduction via its two metal-oxide-semiconductor (MOS) regions. One of these regions is a depletion region where majority carriers are not present and the other is an accumulation region where majority carriers are present. The device has a gate connected to one of the source and drains and the other source or drain is then connected to the current source. When the gate is charged, a voltage gradient is created between the source and drain which is strong enough to move the majority carriers from the depletion region to the accumulation region, thereby allowing current to flow through the device.

The FDMC86520DC can be used in a variety of applications, such as power supplies, switching power amplifiers, high-speed modulation, rectification and low frequency operation. The device is suitable for DC to DC convertors and other applications needing quick response times and high-power density. It can also be used in wireless communications, battery management systems and other applications requiring low gate voltage options.

The FDMC86520DC is a reliable and highly efficient MOSFET device that can be used in a wide range of applications. It offers low power consumption and fast switching speeds, making it ideal for portable devices, high-speed modulation, rectification and low frequency operation.

The specific data is subject to PDF, and the above content is for reference

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