Allicdata Part #: | FDMC86520DCTR-ND |
Manufacturer Part#: |
FDMC86520DC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N CH 60V 17A POWER33 |
More Detail: | N-Channel 60V 17A (Ta), 40A (Tc) 3W (Ta), 73W (Tc)... |
DataSheet: | FDMC86520DC Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | Dual Cool ™ 33 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 73W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2790pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | Dual Cool™, PowerTrench® |
Rds On (Max) @ Id, Vgs: | 6.3 mOhm @ 17A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 8V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta), 40A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDMC86520DC is a single enhancement mode Field Effect Transistor (FET) with N-Channel MOSFET technology. The device is a 30V, 175mA, 5.8W low gate voltage FET that can be used to provide high-power density for portable device applications. It is designed to provide a smaller, more power efficient alternative to traditional MOSFET devices and can be used in various applications including switching, thermal management, lighting, power management and control.
The FDMC86520DC is ideal for applications that require high switching speeds and low on-state resistance. It has a maximum operating temperature range of -50°C to 150°C and is RoHS compliant. With this device, manufacturers are able to reduce the space required for power management and control circuitry while improving the system performance. In addition, the FDMC86520DC exhibits excellent reliability and high breakdown voltage resulting in improved circuit stability.
The FDMC86520DC is available in a TO-206AA (SOT-223) package that is ideal for applications requiring small size and low cost. The device has an integrated ESD protection circuit which improves its durability and reduces the risk of device failure due to electrostatic discharge. The device also has on-board thermal sensing, enabling protection features in the event of thermal overload.
The FDMC86520DC works on the principle of current conduction via its two metal-oxide-semiconductor (MOS) regions. One of these regions is a depletion region where majority carriers are not present and the other is an accumulation region where majority carriers are present. The device has a gate connected to one of the source and drains and the other source or drain is then connected to the current source. When the gate is charged, a voltage gradient is created between the source and drain which is strong enough to move the majority carriers from the depletion region to the accumulation region, thereby allowing current to flow through the device.
The FDMC86520DC can be used in a variety of applications, such as power supplies, switching power amplifiers, high-speed modulation, rectification and low frequency operation. The device is suitable for DC to DC convertors and other applications needing quick response times and high-power density. It can also be used in wireless communications, battery management systems and other applications requiring low gate voltage options.
The FDMC86520DC is a reliable and highly efficient MOSFET device that can be used in a wide range of applications. It offers low power consumption and fast switching speeds, making it ideal for portable devices, high-speed modulation, rectification and low frequency operation.
The specific data is subject to PDF, and the above content is for reference
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