SQJ479EP-T1_GE3

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	68W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4500pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	150nC @ 10V
Series:	Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:	33 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	32A (Tc)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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SQJ479EP-T1_GE3 is a power MOS FET from China, which is also known as Single Enhancement Mode MOS Field-Effect Transistor (MOSFET). It is basically a type of voltage-controlled device that uses field-effect to control the flow of electrical current. This MOS FET is capable of operating at a wide range of input voltages, making it suitable for a variety of applications. The SQJ479EP-T1_GE3 is available in a variety of sizes and packages depending on the application requirements and is usually used in power management applications. It is characterized by its flexibility, high speed and low on-resistance, making it suitable for a wide range of devices. Furthermore, this MOS FET has a high current rating for safe and reliable operation. The working principle of this MOS FET is based on the principle of semiconductor injection. When a voltage is applied across the gate and source of the MOS FET, an electric field is created, which forces electrons from the source to the gate. These electrons act as a barrier that prevents current from flowing from the source to the drain. This process is known as electron injection and is used to control the flow of current through the MOS FET.The SQJ479EP-T1_GE3 is suitable for use in a variety of applications including audio amplifiers, switches, power supplies, motor controls, zoom lenses and other digital designs. It is generally used to switch large currents or to provide voltage or current regulation. For example, it can be used to regulate the voltage applied to an amplifier or motor. Furthermore, this MOS FET is also used in power management designs, such as battery chargers and solar panels.In conclusion, the SQJ479EP-T1_GE3 is an excellent choice for a wide range of applications and is an excellent choice for power management designs. Thanks to its flexibility, high speed, low on-resistance and high current rating, it is suitable for a wide range of devices and applications.

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