SI2372DS-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI2372DS-T1-GE3TR-ND

Manufacturer Part#:

SI2372DS-T1-GE3

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CHAN 30V SOT23
More Detail: N-Channel 30V 4A (Ta), 5.3A (Tc) 960mW (Ta), 1.7W ...
DataSheet: SI2372DS-T1-GE3 datasheetSI2372DS-T1-GE3 Datasheet/PDF
Quantity: 90000
1 +: $ 0.08000
10 +: $ 0.07760
100 +: $ 0.07600
1000 +: $ 0.07440
10000 +: $ 0.07200
Stock 90000Can Ship Immediately
$ 0.08
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 288pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 33 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 5.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI2372DS-T1-GE3 is a single N-Channel MOSFET with a breakdown voltage of 300 V, an RDS(on) of 24 mΩ, and 34 A of continuous drain current. This versatile MOSFET is found in a wide variety of applications ranging from temperature regulation to embedded MCU systems. It is versatile enough to be useful for switching, amplification, and signal switching applications.

The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a three-terminal, voltage-controlled device which acts as an electrical switch between two sources. It is constructed from a gate, drain and source, and works by modifying the concentration of electron carriers in the channel between the gate and the drain, which will regulate the current flow between the two.

The gate terminal is connected to a voltage source, and when a positive voltage is applied, it allows current to flow between the gate and drain, thereby providing a path for the current. When the voltage source is removed, the gate to drain channel is blocked, and no current will flow. This makes the MOSFET ideal for applications such as switching and amplification as it can act as a low-voltage switch.

The SI2372DS-T1-GE3 is designed to be used in numerous applications such as temperature regulation, energy management systems and embedded MCU systems. Due to its low RDS(on) of 24 mΩ and its ability to handle 34 A of drain current, it can be used for a variety of power control and switching applications. In a temperature regulation system, the MOSFET can be used to switch between two circuits, allowing the user to accurately regulate the temperature.

In an energy management system, the MOSFET can be used to switch between different power sources, allowing the user to manage their energy usage efficiently. The MOSFET can also be used for embedded MCU systems, as it can provide a low voltage path to the microcontroller, allowing for communication between the two.

The SI2372DS-T1-GE3 is a versatile MOSFET that can be used in a multitude of applications. Its low RDS(on) and its ability to handle 34 A of continuous drain current make it an ideal choice for switching, amplification and signal switching applications. Its three terminals and wide range of applications make it a great choice for a variety of applications, from temperature regulation to energy management systems.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SI23" Included word is 40
Part Number Manufacturer Price Quantity Description
SI2329DS-T1-GE3 Vishay Silic... -- 15000 MOSFET P-CH 8V 6A SOT-23P...
SI2314EDS-T1-E3 Vishay Silic... -- 39000 MOSFET N-CH 20V 3.77A SOT...
SI2303-TP Micro Commer... 0.06 $ 1000 P-CHANNEL MOSFET, SOT-23 ...
SI2307BDS-T1-GE3 Vishay Silic... 0.18 $ 1000 MOSFET P-CH 30V 2.5A SOT2...
SI2312BDS-T1-E3 Vishay Silic... -- 39000 MOSFET N-CH 20V 3.9A SOT2...
SI2302CDS-T1-GE3 Vishay Silic... -- 48000 MOSFET N-CH 20V 2.6A SOT2...
SI2307BDS-T1-E3 Vishay Silic... -- 9000 MOSFET P-CH 30V 2.5A SOT2...
SI2308CDS-T1-GE3 Vishay Silic... -- 3000 MOSFET N-CH 60V 2.6A SOT2...
SI2319DS-T1-GE3 Vishay Silic... 0.22 $ 1000 MOSFET P-CH 40V 2.3A SOT2...
SI2333DS-T1-E3 Vishay Silic... -- 183000 MOSFET P-CH 12V 4.1A SOT2...
SI2302DDS-T1-GE3 Vishay Silic... -- 18000 MOSFET N-CHAN 20V SOT23N-...
SI2323DS-T1 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 3.7A SOT2...
SI2333DS-T1-GE3 Vishay Silic... -- 6000 MOSFET P-CH 12V 4.1A SOT2...
SI2308BDS-T1-GE3 Vishay Silic... -- 186000 MOSFET N-CH 60V 2.3A SOT2...
SI2312-TP Micro Commer... 0.06 $ 1000 N-CHANNEL MOSFET, SOT-23 ...
SI2392DS-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 3.1A SOT...
SI2303BDS-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 30V 1.49A SOT...
SI2333-TP Micro Commer... 0.06 $ 1000 P-CHANNEL MOSFET, SOT-23 ...
SI2303CDS-T1-E3 Vishay Silic... 0.14 $ 1000 MOSFET P-CH 30V 2.7A SOT2...
SI2303BDS-T1 Vishay Silic... -- 1000 MOSFET P-CH 30V 1.49A SOT...
SI2351DS-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 2.8A SOT2...
SI2367DS-T1-GE3 Vishay Silic... -- 9000 MOSFET P-CH 20V 3.8A SOT-...
SI2343DS-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 30V 3.1A SOT-...
SI2316DS-T1-GE3 Vishay Silic... 0.21 $ 1000 MOSFET N-CH 30V 2.9A SOT2...
SI2309CDS-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 60V 1.6A SOT2...
SI2325DS-T1-GE3 Vishay Silic... -- 42000 MOSFET P-CH 150V 0.53A SO...
SI2333CDS-T1-E3 Vishay Silic... -- 12192 MOSFET P-CH 12V 7.1A SOT2...
SI2341DS-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 30V 2.5A SOT-...
SI2306-TP Micro Commer... 0.06 $ 1000 N-CHANNEL MOSFET, SOT-23 ...
SI2392ADS-T1-GE3 Vishay Silic... -- 42000 MOSFET N-CH 100V 3.1A SOT...
SI2304DS,215 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 30V 1.7A SOT2...
SI2303BDS-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 30V 1.49A SOT...
SI2372DS-T1-GE3 Vishay Silic... 0.08 $ 90000 MOSFET N-CHAN 30V SOT23N-...
SI2337DS-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 80V 2.2A SOT2...
SI2343DS-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 30V 3.1A SOT2...
SI2327DS-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 200V 0.38A SO...
SI2321DS-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 2.9A SOT-...
SI2308DS-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 60V 2A SOT23-...
SI2305ADS-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 8V 5.4A SOT23...
SI2321DS-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 20V 2.9A SOT-...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics