
Allicdata Part #: | SI2372DS-T1-GE3TR-ND |
Manufacturer Part#: |
SI2372DS-T1-GE3 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CHAN 30V SOT23 |
More Detail: | N-Channel 30V 4A (Ta), 5.3A (Tc) 960mW (Ta), 1.7W ... |
DataSheet: | ![]() |
Quantity: | 90000 |
1 +: | $ 0.08000 |
10 +: | $ 0.07760 |
100 +: | $ 0.07600 |
1000 +: | $ 0.07440 |
10000 +: | $ 0.07200 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 960mW (Ta), 1.7W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 288pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.9nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 33 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta), 5.3A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI2372DS-T1-GE3 is a single N-Channel MOSFET with a breakdown voltage of 300 V, an RDS(on) of 24 mΩ, and 34 A of continuous drain current. This versatile MOSFET is found in a wide variety of applications ranging from temperature regulation to embedded MCU systems. It is versatile enough to be useful for switching, amplification, and signal switching applications.
The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a three-terminal, voltage-controlled device which acts as an electrical switch between two sources. It is constructed from a gate, drain and source, and works by modifying the concentration of electron carriers in the channel between the gate and the drain, which will regulate the current flow between the two.
The gate terminal is connected to a voltage source, and when a positive voltage is applied, it allows current to flow between the gate and drain, thereby providing a path for the current. When the voltage source is removed, the gate to drain channel is blocked, and no current will flow. This makes the MOSFET ideal for applications such as switching and amplification as it can act as a low-voltage switch.
The SI2372DS-T1-GE3 is designed to be used in numerous applications such as temperature regulation, energy management systems and embedded MCU systems. Due to its low RDS(on) of 24 mΩ and its ability to handle 34 A of drain current, it can be used for a variety of power control and switching applications. In a temperature regulation system, the MOSFET can be used to switch between two circuits, allowing the user to accurately regulate the temperature.
In an energy management system, the MOSFET can be used to switch between different power sources, allowing the user to manage their energy usage efficiently. The MOSFET can also be used for embedded MCU systems, as it can provide a low voltage path to the microcontroller, allowing for communication between the two.
The SI2372DS-T1-GE3 is a versatile MOSFET that can be used in a multitude of applications. Its low RDS(on) and its ability to handle 34 A of continuous drain current make it an ideal choice for switching, amplification and signal switching applications. Its three terminals and wide range of applications make it a great choice for a variety of applications, from temperature regulation to energy management systems.
The specific data is subject to PDF, and the above content is for reference
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SI2303BDS-T1 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 1.49A SOT... |
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SI2343DS-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 3.1A SOT-... |
SI2316DS-T1-GE3 | Vishay Silic... | 0.21 $ | 1000 | MOSFET N-CH 30V 2.9A SOT2... |
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