Allicdata Part #: | FDMC7660DCTR-ND |
Manufacturer Part#: |
FDMC7660DC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 40A POWER33 |
More Detail: | N-Channel 30V 30A (Ta), 40A (Tc) 3W (Ta), 78W (Tc)... |
DataSheet: | FDMC7660DC Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | Dual Cool ™ 33 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 78W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5170pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 76nC @ 10V |
Series: | Dual Cool™, PowerTrench® |
Rds On (Max) @ Id, Vgs: | 2.2 mOhm @ 22A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Ta), 40A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDMC7660DC is a single N-channel enhanced voltage MOSFET (EVMOSFET) for a wide range of applications. This device provides superior shooting-through current characteristics, improved ESD performance, and improved avalanche capabilities. It is widely used in the field of power supplies, solar inverters, switching power supplies, DC/DC converters, AC/DC adapters and motor drives.
The FDMC7660DC has a VDS maximum voltage of 62V and a RDS(on) of 32.5 mΩ at VGS = 10 V. Its peak current capability makes this device suitable for applications that need during load stepresponse or mini-loaddriving capability. The FDMC7660DC also presents excellent avalanche ruggedness, ESD protection, and low on-resistance, thanks to its design optimized for improved device characteristics. This superior performance makes the FDMC7660DC ideal for most cost-sensitive power management applications.
The working principle of the FDMC7660DC is based on field-effect transistors (FETs) which are a type of transistor that operates by controlling the size and the direction of the current that passes through it. FETs are nonlinear voltage-controlled devices, meaning that their ID-VDS curves are highly dependent on the VGS. In the FDMC7660DC, when the voltage applied to the gate (VGS) is greater than or equal to the threshold voltage (Vth), the device enters an enhancement mode, and the channel between the source and the drain is opened, allowing current to flow. The higher the voltage between the gate and the source (VGS > Vth), the greater the current between the source and the drain. Conversely, when the voltage between the gate and the source is lower than the Vth, the device\'s channel is closed and no current flows. The current flowing between the source and the drain is proportional to the voltage applied to the gate (VGS).
The FDMC7660DC offers superior performance and improved ESD protection, thanks to its enhanced voltage MOSFET technology. Its pinch-off voltage and saturation current are designed to improve peak current capability and reduce power dissipation, while its low capacitance makes it suitable for high frequency switching applications. The device is available in an 8-pin SOIC, a 5-pin TO-220, and a 40-pin PQFN package.
The FDMC7660DC is ideal for a wide range of applications that require high speed switching and low on-resistance. These include DC/DC converters, solar inverters, LCD/LED panel supplies, power supplies, motor drives, automotive applications, and more. Its excellent on-resistance, low capacitance, and enhanced ESD protection make it a great choice for cost-sensitive power management applications.
The specific data is subject to PDF, and the above content is for reference
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