| Allicdata Part #: | SI1424EDH-T1-GE3TR-ND |
| Manufacturer Part#: |
SI1424EDH-T1-GE3 |
| Price: | $ 0.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 20V 4A SOT-363 |
| More Detail: | N-Channel 20V 4A (Tc) 1.56W (Ta), 2.8W (Tc) Surfac... |
| DataSheet: | SI1424EDH-T1-GE3 Datasheet/PDF |
| Quantity: | 6000 |
| 1 +: | $ 0.05600 |
| 10 +: | $ 0.05432 |
| 100 +: | $ 0.05320 |
| 1000 +: | $ 0.05208 |
| 10000 +: | $ 0.05040 |
Specifications
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package: | SOT-363 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.56W (Ta), 2.8W (Tc) |
| FET Feature: | -- |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 8V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 33 mOhm @ 5A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
SI1424EDH-T1-GE3 is a single-featured transistor that is uniquely designed for a variety of applications. It has a drain to source breakdown voltage of -60V and a VGS(th) of 4V max. The ESD tolerance of the unit is ± 2kV, making it a very reliable choice in various applications.Application Field
This single-gate transistor is a versatile device that can be used in almost every electronics project. The most common applications are motor control, power management, and automotive applications.In terms of motor control, the SI1424EDH-T1-GE3 can be used to control the speed, direction, and acceleration of a motor. This is done by controlling the voltage that is sent to the motor, allowing it to accurately adjust to specific RPMs and torque. The SI1424EDH-T1-GE3 is also used for power management in electrical grids. By controlling the voltage and amperage flowing through the grid, it can ensure proper reliability and performance for all connected systems.Lastly, this single-gate transistor can be used in automotive applications. It can be used to control the speed and acceleration of a vehicle, as well as controlling the signal and power to various components such as the fuel injection system, exhaust, and engine systems.Working Principle
The SI1424EDH-T1-GE3 uses a field-effect transistor to control current flow. It works by varying the electric field that exists between the gate and the source. For example, when the gate voltage is increased, it creates an electric field that attracts free electrons from the source to the drain, allowing current to flow from the source to the drain.When the gate voltage is reduced, the electric field is weakened and the electrons are not able to flow through the device as easily. This makes it an ideal device for motor control, as it can be used to control the voltage, current, and power of the motor. In this way, the SI1424EDH-T1-GE3 can be used to accurately control the speed, direction, and acceleration of the motor.Conclusion
The SI1424EDH-T1-GE3 single-gate transistor is a versatile device that is capable of a variety of applications, ranging from motor control to power management. It works by controlling the electric field between the gate and source, allowing it to accurately control the voltage, current, and power of the motor. This makes it an ideal choice for a variety of automotive, motor control, and power management applications.The specific data is subject to PDF, and the above content is for reference
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SI1424EDH-T1-GE3 Datasheet/PDF