SI2314EDS-T1-E3 Allicdata Electronics
Allicdata Part #:

SI2314EDS-T1-E3TR-ND

Manufacturer Part#:

SI2314EDS-T1-E3

Price: $ 0.21
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 20V 3.77A SOT23-3
More Detail: N-Channel 20V 3.77A (Ta) 750mW (Ta) Surface Mount ...
DataSheet: SI2314EDS-T1-E3 datasheetSI2314EDS-T1-E3 Datasheet/PDF
Quantity: 39000
1 +: $ 0.21000
10 +: $ 0.20370
100 +: $ 0.19950
1000 +: $ 0.19530
10000 +: $ 0.18900
Stock 39000Can Ship Immediately
$ 0.21
Specifications
Vgs(th) (Max) @ Id: 950mV @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
FET Feature: --
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 33 mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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An SI2314EDS-T1-E3 is a device designed to operate as a switch in a circuit. It\'s a common part in many electronic systems, and as such can be used to control voltage, current, and power. It is a type of field-effect transistor (FET) made with silicon materials. The primary benefit of an SI2314EDS-T1-E3 is that it can be used to control signals on a higher level of accuracy than other types of transistors without sacrificing performance or power efficiency. In this article, we will discuss the application field and working principle of the SI2314EDS-T1-E3.

An SI2314EDS-T1-E3 is a single field-effect transistor (FET) which is commonly used in electronic circuits. The device is optimised for low DC power consumption, which makes it suitable for a range of applications, such as high-speed switching and digital logic systems. Its maximum voltage rating is 12 volts, making it ideal for automotive, data processing and low-voltage motor control.

The SI2314EDS-T1-E3 has a typical drain-source breakdown voltage of 5 volts, making it effective for switching low-voltage signals. Additionally, the part has an increased gate source breakdown voltage of 24 volts, allowing it to be used with higher voltage switching applications. The device also features rail-rail functions, allowing it to operate on both the positive and negative rail. The on-resistance of the part is typically around 3 milliohms, and its dV/dT is typically 500 V/ms.

The SI2314EDS-T1-E3 is a three-terminal device and operates with a single power supply. Its drain and source pins both receive the three-state inputs and the output is taken from the gate pin. In the device, the transistor is switched on and off by a Gate charge, and when the Gate voltage is negative, it is switched off. The Gate voltage has to have sufficient negative voltage to switch off the transistor. The drain current is determined by the Gate voltage, and when the Gate has a negative voltage, the device is in the off state.

The SI2314EDS-T1-E3 is used in a wide variety of applications, such as DC motors, stepper motors, logic signals and power supplies, where it can be used to control voltage and current. The device is suitable for high-frequency switching and digital logic systems, as it can be used over a wide range of frequencies. It is also ideal for automotive applications, as it offers low power consumption and can be used in a wide temperature range.

In conclusion, the SI2314EDS-T1-E3 is an excellent choice for both low- and high-voltage applications. The device is relatively easy to use and its three-pin configuration, rail-rail functions, and high-frequency capabilities make it a great asset. Its low DC power consumption and low dV/dT make it a great choice for many types of systems, and its drain and source pins are designed to be used with three-state input signals, making it a versatile choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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