
Allicdata Part #: | NTMS5P02R2GOSTR-ND |
Manufacturer Part#: |
NTMS5P02R2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 3.95A 8-SOIC |
More Detail: | P-Channel 20V 3.95A (Ta) 790mW (Ta) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.25V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 790mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 16V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 33 mOhm @ 5.4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.95A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NTMS5P02R2G is part of a line of transistors, Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) in the form of a single device. This device, and FETs and MOSFETs in general, is a semiconductor electronic device in which the conductivity of a channel between two electrodes on a semiconductor substrate can be varied and controlled by an electric field. FETs can be used in linear and in digital switching applications and MOSFETs are commonly used to switch high-voltage and high-power currents in digital applications such as computers and integrated circuits.
The NTMS5P02R2G is a high-power MOSFET. Its drain-source voltage (VDS) is ±50V, which allows it to be used in a variety of high-voltage circuits or applications, including power circuits. Its junction-gate voltage (VGS) is, for this particular device, 5V. Its drain current (ID) can range from 2A to 10A depending on the temperature; at 25°C its drain current can reach up to 10A. With such features as a breakdown voltage of 400V and an insulated gate, this device is ideal for a variety of power switching applications, such as motor drives, DC/AC converters, and motor control.
The working principle of the NTMS5P02R2G is based upon its FET and MOSFET structure. As its gate voltage is increased, the channel between the source and drain increases, allowing more current to flow through the device. As the gate voltage is decreased, the channel is pinched off, allowing less current to flow through the device. This allows the device to operate as a switch with varying degrees of on/off times and resistance.
The use of FETs and MOSFETs opens the door to a wide range of possible applications. FETs and MOSFETs can be used in a variety of sensing, switching, and amplifying tasks. Common applications of FETs and MOSFETs include power supply regulation, power distribution, motor control, analog-to-digital and digital-to-analog signal processing, speed control, audio amplification, and voltage and current sensing. The NTMS5P02R2G is an ideal device for a variety of power switching applications due to its high-power drain-source voltage, junction-gate voltage, and drain current.
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