FDMC2512SDC Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDMC2512SDC is a high voltage single N-Channel Field-Effect Transistor (FET). This type of transistor is used in a wide variety of applications where low on resistance is demanded. It is commonly used in power supplies, motor control applications, switching regulators, as well as many other areas where a high current has to be managed.

The FDMC2512SDC is a vertical power mosfet with a drain current of 25 A at a drain voltage of 12 V. It is rated at 12.5 W, meaning it can dissipate 12.5 W of power while conducting continuously. It is available in a TO-247 package and has an RDS(ON) value of 2.22 mΩ, a maximum gate threshold voltage of 3 V and a reverse body diode avalanche energy of 35 mJ.

The FDMC2512SDC offers wide operating temperature range, allowing for applications where temperature control is needed. It features a low gate threshold voltage VGS typ 1.35 V and it is rated to a maximum drain-source voltage VDS of 30 V.

Compared to regular model FETs, the FDMC2512SDC offers superior static and dynamic performance capabilities. It features an ultra-low on-resistance value, due to the powerDMOS protection process technology. This technology uses a special gate oxide which significantly boosts the ability of the FET to control current. It also offers a high-frequency high-power switching capability.

The FDMC2512SDC works on the principle of creating a voltage shield between the gate and drain. When a small voltage is applied to the gate, it creates a larger drain-source voltage, which helps to amplify the base current. This amplified current passes through the drain-source junction and creates a heavy current flow between the drain and source.

The FDMC2512SDC offers protection against overloading and reverse currents, using a built-in adaptive protection circuitry. This provides the FET with a reverse-bias immunity and prevents damage through short-circuiting and overloading. The FET has a low gate-source leakage current, allowing for accurate switching and a reduced output noise level.

The FDMC2512SDC is a versatile power transistor with a wide range of applications. It is commonly used in electronic motor control, lowering of power consumption and reducing dissipation, high-reliability products, power switching, power supply protection, high-speed telecommunication, and other industrial applications.

In conclusion, the FDMC2512SDC is an efficient and reliable single N-Channel FET. It offers superior performance, enhanced protection, and low gate-source leakage. This makes it an ideal solution for a wide range of applications, from high-performance motor control to industrial applications.

The specific data is subject to PDF, and the above content is for reference