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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IRLR3802TRLPBF- ND	IRLR3802TRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id: 1.9V @ 250A Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 6V Power Dissipation (Max): 88W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IRLR3802TRPBFTR -ND	IRLR3802TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id: 1.9V @ 250A Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 6V Power Dissipation (Max): 88W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	629 Order	--
SSM6J216FELFTR- ND	SSM6J216FE,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 4.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 32 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: ES6 Package / Case: SOT-563, SOT-666	4000 Order	4000+: $0.0956
IRLR3802PBF-ND	IRLR3802PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id: 1.9V @ 250A Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 6V Power Dissipation (Max): 88W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
NTJS3151PT2G-ND	NTJS3151PT2G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.3A, 4.5V Vgs(th) (Max) @ Id: 400mV @ 100A Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 12V Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88/SC70-6/SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	1000 Order	3000+: $0.0789
NTJS3151PT1GOST R-ND	NTJS3151PT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.3A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 100A Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 12V Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88/SC70-6/SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	1000 Order	--
NTJS3151PT2-ND	NTJS3151PT2	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.3A, 4.5V Vgs(th) (Max) @ Id: 400mV @ 100A Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 12V Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88/SC70-6/SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	1000 Order	1+: $0
IRF7210PBF-ND	IRF7210PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 500A Gate Charge (Qg) (Max) @ Vgs: 212nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 17179pF @ 10V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
IRF7233TR-ND	IRF7233TR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.5A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
PMPB15XPZ-ND	PMPB15XPZ	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 8.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.2A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2875pF @ 6V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	1000 Order	3000+: $0.0973
IRF7210TRPBFTR- ND	IRF7210TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 500A Gate Charge (Qg) (Max) @ Vgs: 212nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 17179pF @ 10V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
IRF7475TRPBFTR- ND	IRF7475TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Rds On (Max) @ Id, Vgs: 15 mOhm @ 8.8A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1590pF @ 6V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
IRF7475PBF-ND	IRF7475PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Rds On (Max) @ Id, Vgs: 15 mOhm @ 8.8A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1590pF @ 6V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
497-11846-2-ND	STL16N1VH5	STMicroelectronics	View more Series: STripFET V Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 3 mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 500mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 2085pF @ 12V Power Dissipation (Max): 2W (Ta), 50W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	--
IRLMS4502TR-ND	IRLMS4502TR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 10V Power Dissipation (Max): 1.7W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro6(TSOP-6) Package / Case: SOT-23-6	1000 Order	--
SI1417EDH-T1-E3 TR-ND	SI1417EDH-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.3A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250A (Min) Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Vgs (Max): 12V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363	1000 Order	--
IRF7233PBF-ND	IRF7233PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.5A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
IRF7476TRPBFTR- ND	IRF7476TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id: 1.9V @ 250A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 6V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
1727-1366-2-ND	PMPB15XPH	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 8.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.2A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2875pF @ 6V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	1000 Order	--
IRF7233PBFTR-ND	IRF7233TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.5A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
IRLU3802PBF-ND	IRLU3802PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id: 1.9V @ 250A Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 6V Power Dissipation (Max): 88W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	--
IRF7233-ND	IRF7233	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.5A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
IRF7476-ND	IRF7476	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id: 1.9V @ 250A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 6V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
62-0063PBF-ND	62-0063PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id: 1.9V @ 250A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 6V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
1727-1246-2-ND	PMPB15XP,115	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 8.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.2A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2875pF @ 6V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	1000 Order	3000+: $0.1754
SSM6J511NULFTR- ND	SSM6J511NU,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVII Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 14A (Ta) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 4A, 8V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 6V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFNB (2x2) Package / Case: 6-WDFN Exposed Pad	6000 Order	3000+: $0.098
RZY200P01TLTR-N D	RZY200P01TL	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 20A (Ta) Vgs (Max): 10V Power Dissipation (Max): 20W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TCPT3 Package / Case: 3-SMD, Flat Leads	1000 Order	2500+: $0.497
SI7104DN-T1-GE3 -ND	SI7104DN-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 26.1A, 4.5V Vgs(th) (Max) @ Id: 1.8V @ 250A Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 6V Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK 1212-8 Package / Case: PowerPAK 1212-8	1000 Order	--
SI7104DN-T1-E3- ND	SI7104DN-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 26.1A, 4.5V Vgs(th) (Max) @ Id: 1.8V @ 250A Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 6V Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK 1212-8 Package / Case: PowerPAK 1212-8	1000 Order	--
SI1417EDH-T1-GE 3TR-ND	SI1417EDH-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.3A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250A (Min) Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Vgs (Max): 12V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363	1000 Order	1+: $0
XN0NE9200LTR-ND	XN0NE9200L	Panasonic Electronic Components	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 1.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V Rds On (Max) @ Id, Vgs: 450 mOhm @ 800mA, 4V Vgs(th) (Max) @ Id: 1.3V @ 1mA Vgs (Max): 15V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 600mW (Ta) Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Supplier Device Package: Mini5-G1 Package / Case: SC-74A, SOT-753	3000 Order	3000+: $0.1873
ES6U1T2RTR-ND	ES6U1T2R	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 1.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 260 mOhm @ 1.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WEMT Package / Case: SOT-563, SOT-666	8000 Order	8000+: $0.0966
296-47758-2-ND	CSD23280F3	Texas Instruments	View more Series: FemtoFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 116 mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 0.95V @ 250A Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4.5V Vgs (Max): -6V Input Capacitance (Ciss) (Max) @ Vds: 234pF @ 6V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PICOSTAR Package / Case: 3-XFDFN	20000 Order	--
RQ1A060ZPTRTR-N D	RQ1A060ZPTR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 23 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 6V Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT8 Package / Case: 8-SMD, Flat Lead	48000 Order	--
RQ5A030APTLTR-N D	RQ5A030APTL	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 62 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs (Max): -8V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 6V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	1000 Order	3000+: $0.0652
568-11041-2-ND	BSH207,135	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 1.52A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 120 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 9.6V Power Dissipation (Max): 417mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	1000 Order	1+: $0
RT1A045APTCRTR- ND	RT1A045APTCR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Vgs (Max): -8V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 6V Power Dissipation (Max): 650mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSST Package / Case: 8-SMD, Flat Lead	3000 Order	3000+: $0.1613
NTHD2110TT1G-ND	NTHD2110TT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.4A, 4.5V Vgs(th) (Max) @ Id: 850mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1072pF @ 6V Power Dissipation (Max): 1.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET Package / Case: 8-SMD, Flat Lead	1000 Order	1+: $0
RT1A060APTR-ND	RT1A060APTR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 19 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V Vgs (Max): -8V Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 6V Power Dissipation (Max): 600mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSST Package / Case: 8-SMD, Flat Lead	1000 Order	3000+: $0.1044
296-45087-2-ND	CSD13385F5T	Texas Instruments	View more Series: FemtoFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 19 mOhm @ 900mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 6V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PICOSTAR Package / Case: 3-XFDFN	500 Order	250+: $0.1903 500+: $0.161 750+: $0.139 1250+: $0.1244

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