Allicdata Part #: | IRLMS4502TR-ND |
Manufacturer Part#: |
IRLMS4502TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 12V 5.5A 6-TSOP |
More Detail: | P-Channel 12V 5.5A (Ta) 1.7W (Ta) Surface Mount Mi... |
DataSheet: | IRLMS4502TR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 600mV @ 250µA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | Micro6™(TSOP-6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.7W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1820pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 5.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRLMS4502TR is a PowerTrench® MOSFET, a type of transistor powered by a voltage gate. This type of transistor is also known as a Field-Effect Transistor, or FET. It’s a type of MOSFET (metal-oxide-semiconductor field-effect transistor), one type in a group of MOSFETs including insulated-gate bipolar transistors, junction FETs, and other types of field-effect transistors. IRLMS4502TR is a single-packaged MOSFET.
The IRLMS4502TR is designed for applications requiring low gate charge and fast switching speeds. It features a low on-resistance at both the source and drain, making it ideal for applications such as power switches, synchronous buck converters, and level shifters. This MOSFET can handle up to 20V and has up to 7A of drain current.
The primary applications of the IRLMS4502TR are synchronous buck converters, level shifters, and power switches. It is ideal for a wide range of applications because it has a low gate charge, fast switching speeds, a low on-resistance at both the source and drain, and a wide operating temperature range. This makes it a great choice for applications that require fast switching speeds and a low on-resistance. Additionally, it is also suitable for applications requiring voltage-controlled impedance matching, a steady signal power output, and considerable fluctuations in current.
The working principle of the IRLMS4502TR is relatively simple. When a voltage is applied to the gate, this causes the channel between the source and drain to be "opened" up, allowing current to flow through the MOSFET. This opens up the channel because the gate of the MOSFET attracts the electrons in the source region, allowing them to pass through the channel to the drain region. This, in turn, allows current to flow through the MOSFET.
When no gate voltage is applied, the channel between source and drain is "closed", meaning that current cannot pass through the transistor. This is because the gate will no longer attract the electrons in the source region, thus preventing them from passing through to the drain region. So, by simply applying a voltage to the gate, the MOSFET can be used to control the amount of current passing through the transistor.
In addition to its use in electronics, the IRLMS4502TR is also used in various industrial applications such as robotic arms, motorized devices, and automated systems. Its low on-resistance and fast switching capabilities make it ideal for these types of applications, as it can control the current in an efficient and reliable manner. Furthermore, its wide operating temperature range means that it can be used in a variety of environments without any issue.
In conclusion, the IRLMS4502TR is an effective and reliable single-packaged MOSFET that is suitable for a range of applications. Its low on-resistance and fast switching speeds make it ideal for synchronous buck converters, level shifters, and power switches, as well as in various industrial applications. Its working principle is based on the principle of voltages applied to the gate, allowing current to flow through the MOSFET. Its wide operating temperature range makes it suitable for use in various environments, making it a versatile and reliable transistor.
The specific data is subject to PDF, and the above content is for reference
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