SI1417EDH-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI1417EDH-T1-GE3TR-ND

Manufacturer Part#:

SI1417EDH-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 12V 2.7A SC-70-6
More Detail: P-Channel 12V 2.7A (Ta) 1W (Ta) Surface Mount SC-7...
DataSheet: SI1417EDH-T1-GE3 datasheetSI1417EDH-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI1417EDH-T1-GE3 is a high-power, low-voltage N-Channel MOSFET (metal-oxide-semiconductor field-effect transistor) that is commonly used for power conversion and switching applications. This MOSFET has a maximum drain-source voltage of 14 volts and a continuous drain current of 83.0 amperes. It is also capable of switching frequencies up to 25 MHZ. The SI1417EDH-T1-GE3 is a great choice for applications that require high current switching.

MOSFETs are a type of transistor that uses a voltage instead of the current to control the switching of the current flow. MOSFETs are often used in circuits that require high switching speeds, low power dissipation and gate protection. The gate of a MOSFET is the control terminal of the device and is sensitive to static electricity, so proper handling of the device is necessary.

The SI1417EDH-T1-GE3 is a single N-Channel MOSFET and is designed for switching applications in power electronic circuits. It has excellent RDS(ON) and low gate charge. This makes the device capable of fast switching times and low input capacitance. It also has a low on-resistance which means that it is capable of handling large amounts of current with minimal power dissipation. The device has a breakdown voltage of 14V and can handle up to 83.0A at 25°C.

This MOSFET is used in a variety of applications including power management, inverters, motor control, and DC-DC converters. It is also used in audio power amplifiers, power supply circuits, and switching regulators. The device is capable of operating at a wide range of temperatures from -55°C to 150°C and has a maximum junction-to-ambient thermal resistance of 2.1°C/W.

The SI1417EDH-T1-GE3 works by allowing a voltage level to be applied to the gate of the device. This creates a small electric field in the drain-source channel which controls the current flow through the device. This current flow can be switched on or off depending on the voltage level applied at the gate. The device has a low input capacitance which means that it is capable of switching the current flow at high speeds.

The SI1417EDH-T1-GE3 is a reliable and efficient device that is well-suited for use in power conversion and switching applications. It has a low on-resistance, high switching speed, and high current capability, making it a great choice for use in a wide range of applications. The device is easy to handle and requires minimal maintenance and care to ensure its reliability and longevity.

The specific data is subject to PDF, and the above content is for reference

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