IRF7475PBF Allicdata Electronics
Allicdata Part #:

IRF7475PBF-ND

Manufacturer Part#:

IRF7475PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 12V 11A 8-SOIC
More Detail: N-Channel 12V 11A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: IRF7475PBF datasheetIRF7475PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1590pF @ 6V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 15 mOhm @ 8.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF7475PBF is a type of Field Effect Transistor (FET) that operates through a metal oxide semiconductor (MOS). It is used in a variety of applications from switching circuits, amplifiers, timers, and microprocessors. The IRF7475PBF is a single-channel FET, meaning it has one control terminal. This terminal is connected to a source of voltage, and when the voltage is applied, current will flow through the FET.

The IRF7475PBF has a variety of application fields due to its design and characteristics. As an example, it can be used in amplifier circuits as a linear amplifier due to its high transconductance. It can also be used in switching circuits due to its low on-state resistance, making it suited for high-speed switching. The IRF7475PBF is capable of high-frequency switching, up to hundreds of megahertz, making it ideal for high-speed data processing. It can also be used in motor control circuits and motor driver circuits.

The working principle of the IRF7475PBF is relatively simple to understand. When a voltage is applied to its gate terminal, a electric field is created which attracts the electrons in the MOS to this terminal. This will cause current to flow through the FET. The current will be determined by how high the voltage is on the gate. The higher the voltage, the more current will flow through the FET.

The IRF7475PBF is also designed to make switching easier. By utilizing a "punch-through" technology, the FET can be switched easier and more efficiently, allowing for higher speeds with less power consumption. In addition, it features a high breakdown voltage rating, allowing it to handle higher voltages. This makes it an ideal choice for power circuits and higher voltage applications.

The IRF7475PBF is an incredibly versatile FET. It can be used in a variety of application fields, from amplifiers to switching circuits, and it features high-frequency switching and a high breakdown voltage rating. It is also designed for easier switching with its "punch-through" technology, making it an ideal choice for power circuits and higher voltage applications. Understanding how the FET works and the application fields it is suited for can help determine its best uses in various designs.

The specific data is subject to PDF, and the above content is for reference

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